Abstract
This chapter provides a comprehensive overview of the electric-field (or voltage) control of magnetic anisotropy, an emerging concept for the next-generation memory device. This approach has many technological appeals as it can enable ultra-low-latency data transfer and ultra-low power electronics. The underlying mechanisms governing magnetization switching from an applied electric-field are interfacial spin-charge coupling and Larmor precession. This allows for electric-field-driven MRAM as opposed to current-driven in conventional spin-torque MRAM. An exhaustive discussion in particular relevance to industry-friendly materials is provided in this chapter. The challenges in implementation and possible solutions including field-free approach are discussed. The chapter summarises the experimental and theoretical progress in electric-field-controlled MRAM, discusses our current understanding, and finally presents the prospects of utilising this approach.
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Lourembam, J., Huang, J. (2021). Electric-Field-Controlled MRAM: Physics and Applications. In: Lew, W.S., Lim, G.J., Dananjaya, P.A. (eds) Emerging Non-volatile Memory Technologies. Springer, Singapore. https://doi.org/10.1007/978-981-15-6912-8_4
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