Abstract
The ab intio method within the recently modified Becke-Johnson potential explore that the Ag2BaSn(Se, S)4 compounds are narrow band gap semiconductors. The lattice parameters, bulk modulus and its derivative are predicted. The calculated elastic constants satisfy Pugh’s criteria. The mBJ potential was selected for further explanation of optical properties of these compounds. The two non-zero dielectric tensor components show isotropy behavior between the perpendicular and parallel components. Based on the results our finding that the Ag2BaSn(Se, S)4 compounds are efficient materials for energy conversion.
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Rahmani, R., Amrani, B., Khodja, K.D., Sediki, H. (2020). Ab Initio Calculations of Structural, Mechanic, Electronic and Optical Properties of Ag2BaSn(Se, S)4 in Kesterite Structure. In: Belasri, A., Beldjilali, S. (eds) ICREEC 2019. Springer Proceedings in Energy. Springer, Singapore. https://doi.org/10.1007/978-981-15-5444-5_44
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