Abstract
Spintronics-based field-effect transistors (s-FET) are a new category of devices, which is an improvement over ordinary transistor by adding the properties of magnetoresistance. The conductivity of s-FET can be controlled by the spin degree of freedom of an electron, which results in extremely low power consumption and low heat dissipation. In the present work, a primary attempt is made to analyze the performance of s-FET designed on two-dimensional electron gas substrate. Superconducting quantum interference device (SQUID) is employed to analyze the magnetic properties of ferromagnetic contacts that cobalt-modified iron oxide. The role of spin polarization in the spin transport phenomenon of s-FET is also analyzed. It is proved that for the higher possible value of spin polarization, spin current also increases. For the value of spin polarization (pā=ā0.8), strong enhancement was observed in the spin current. The switching action in s-FET is checked as a function of gate voltage, and it shows a strong dependence on the gate voltage.
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Acknowledgements
Prof. (Mrs.) Neetu Gyanchandani is very much thankful to Dr. S. R. Choudhary, Principal, JD College of Engineering and Management, Nagpur, for providing necessary academic help.
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Gyanchandani, N., Pawar, S., Maheshwary, P., Nemade, K. (2021). Performance Study of Spin Field-Effect Transistor Based on Cobalt-Modified Iron Oxide Ferromagnetic Electrode. In: Deshpande, P., Abraham, A., Iyer, B., Ma, K. (eds) Next Generation Information Processing System. Advances in Intelligent Systems and Computing, vol 1162 . Springer, Singapore. https://doi.org/10.1007/978-981-15-4851-2_10
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