Abstract
In this paper, we propose a two-dimensional analytical model of silicon-on-insulator tunneling field-effect transistors (SOI TFETs) by applying the superposition principle. By solving 2D Poisson’s equation with the help of boundary conditions of channel region and gate oxide region, we calculated the surface potential and electric field for both lateral and vertical directions. Here, we have demonstrated the results obtained from an analytical expression which has been compared with TCAD 2D simulator for some parameters, like gate oxide thickness, by varying the channel length with different Vgs and Vds values.
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Kulkarni, N., Vimala, P. (2020). Two-Dimensional Potential-Based Model for Tunnel Field-Effect Transistor (TFET). In: Kadambi, G., Kumar, P., Palade, V. (eds) Emerging Trends in Photonics, Signal Processing and Communication Engineering. Lecture Notes in Electrical Engineering, vol 649. Springer, Singapore. https://doi.org/10.1007/978-981-15-3477-5_9
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DOI: https://doi.org/10.1007/978-981-15-3477-5_9
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