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Principles: Bond-Band-Barrier Correlation

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Electron and Phonon Spectrometrics

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Abstract

Oxide tetrahedral bond formation with orbital occupation by the shared bonding and nonbonding electron pairs determine uniquely the bond geometry, valence density of states, and the surface potential barrier. Parameterization of all involved parameters as a function of the bond angle and length and the origin of the SPB not only simplified the calculations but also importantly ensured the solution approaching true situations.

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore

    Chang Q Sun

  2. Yangtze Normal University, Chongqing, China

    Chang Q Sun

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Sun, C. (2020). Principles: Bond-Band-Barrier Correlation. In: Electron and Phonon Spectrometrics. Springer, Singapore. https://doi.org/10.1007/978-981-15-3176-7_14

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