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Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

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Abstract

Controlled-polarization-type ferroelectric-gate thin film transistors (FeTFTs), which utilize the interaction between the polarizations of a polar semiconductor and a ferroelectric layer, have been proposed. When the polarizations align head-to-head, electrons that correspond to the sum of the polarizations are induced at the interface between the polar semiconductor and the ferroelectric layer. When the semiconductor is depleted, however, the polarization in the polar semiconductor aligns in the same direction as the polarization in the ferroelectric layer, whereas the polarization of the ferroelectric layer remains stable even under a depolarization field. This chapter describes the nonvolatile operation of the controlled-polarization-type FeTFTs resulting from the ferroelectric polarization reversal.

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Authors and Affiliations

  1. Graduate School of Engineering, Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka, 599-8531, Japan

    Norifumi Fujimura & Takeshi Yoshimura

Authors
  1. Norifumi Fujimura
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  2. Takeshi Yoshimura
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Correspondence to Norifumi Fujimura .

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Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Fujimura, N., Yoshimura, T. (2020). Novel Ferroelectric Gate Field-Effect Transistors (FeFETs); Controlled Polarization-Type FeFETs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_8

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