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Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

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Abstract

Ferroelectric field-effect transistors (FeFETs) composed of P(VDF-TrFE) (Poly(Vinylidenefluoride-Tirfluoroethylene)) thin films and semiconductor substrates show excellent ferroelectric transistor characteristics. Since P(VDF-TrFE) has the ferroelectricity as large as those of oxide ferroelectric materials with much lower dielectric constant, it is the ideal material to build FeFET with the combination to inorganic semiconductor material. In addition, the process condition to form P(VDF-TrFE) is much milder to underlying semiconducting material compared to oxide ferroelectrics. Therefore, the improvement on the retention characteristics is expected by employing P(VDF-TrFE) ferroelectrics in FeFET instead of oxide ferroelectrics. The potential of P(VDF-TrFE) FeFET is discussed in this chapter.

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Notes

  1. 1.

    poly(3-hexyltiophene).

  2. 2.

    poly[2-methoxy, 5-(2′-ethyl-hexyloxy)-p-phenylene-vinylene].

  3. 3.

    poly(2-methoxy-5-(3′, 7′-dimethylocthyloxy)-phenylenevinylene).

  4. 4.

    [6,6]-phenyl-C61-butyricacidmethylester.

  5. 5.

    p(fluorene-bithiophene).

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Author information

Authors and Affiliations

  1. YourFriend, Hachioji, Tokyo, 192-0916, Japan

    Yoshihisa Fujisaki

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  1. Yoshihisa Fujisaki
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Correspondence to Yoshihisa Fujisaki .

Editor information

Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Fujisaki, Y. (2020). Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_10

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