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Analysis of NaCl Electrolyte Based SOI-ISFET pH Sensor

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Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 1034))

Abstract

In this paper, the analysis on the characteristic of the Silicon-on-Insulator Ion-Sensitive Field Effect Transistor (SOI-ISFET) pH Sensor has been carried out. NaCl is used as an electrolyte to sense the change in pH value. The analysis includes DC analysis which is modeled using Poisson/Boltzmann equations and frequency-dependent AC analysis which includes Poisson/Nernst/Planck–Poisson/Drift/Drift equations together with site binding charge model equations at the electrolyte and insulator interfaces. The simulation is carried out using ENBIOS-2D Lab tool provided by nanohub group. From the results, it is observed that with an increase in the pH value, the slope of the transfer curve decreases and the threshold voltage of the device increases. Also, the frequency-dependent performance of the device at pH value of 7 is analyzed and it is observed that the device becomes less sensitive at higher frequencies.

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References

  1. Carballo, J.A., Chan, W.T.J., Gargini, P.A., et al.: ITRS 2.0: toward a re-framing of the semiconductor technology roadmap. In: 32nd IEEE International Conference on Computer Design, ICCD (2014)

    Google Scholar 

  2. Yan, R.H., Ourmazd, A., Lee, K.F.: Scaling the Si MOSFET: from bulk to SOI to bulk. IEEE Trans. Electron Devices 39(7), 1704–1710 (1992)

    Article  Google Scholar 

  3. Yamada, T., Nakajima, Y., Hanajiri, T., Sugano, T.: Suppression of drain-induced barrier lowering in silicon-on-insulator MOSFETs through source/drain engineering for low-operating-power system-on-chip applications. IEEE Trans. Electron Devices 60, 260–267 (2013)

    Article  Google Scholar 

  4. Mishra, V.K., Chauhan, R.K.: Performance analysis of fully-depleted ultra-thin-body (FD UTB SOI) MOSFET based CMOS inverter circuit for low power digital applications. In: Springer AISC Series, vol. 434, pp. 375–382 (2016)

    Google Scholar 

  5. Mishra, V.K., Chauhan, R.K.: Performance analysis of modified source and tunnel diode body contact based fully-depleted silicon-on-insulator MOSFET for low power digital applications. J. Electron. Optoelectron. 12(1), 59–66 (2017). America Scientific Publisher

    Google Scholar 

  6. Bergveld, P.: Development of ion-sensitive solid-state device for neurophysiological measurements. IEEE Trans. Biomed. Eng. 17(1), 70–71 (1970)

    Article  Google Scholar 

  7. Kaisti, M., Zhang, Q., Prabhu, A., Lehmusvuori, A., Rahman, A., Levon, K.: An ion-sensitive floating gate FET model: operating principles and electrofluidic gating. IEEE Trans. Electron Devices 62(8), 2628–2635 (2015)

    Article  Google Scholar 

  8. Abdolkader, T.M.: A numerical simulation tool for nanoscale ion-sensitive field-effect transistors. Int. J. Numer. Model. Eletron. Netw. Devices Fields 29(6), 1118–1128 (2016)

    Article  Google Scholar 

  9. Hoxha, A., Scarbolo, P., Cossettini, A., Pittino, F., Selmi, L.: ENBIOS-2D Lab. http://nanohub.org/resources/biolabisfet (https://doi.org/10.4231/d3v11vm7d)

  10. Pittino, F., Selmi, L.: Use and comparative assessment of the CVFEM method for Poisson-Boltzmann and Poisson–Nernst–Planck three dimensional simulations of impedimetric nano-biosensors operated in the DC and AC small signal regimes. Comput. Methods Appl. Mech. Eng. 278, 902–923 (2014)

    Article  MathSciNet  Google Scholar 

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Correspondence to Narendra Yadava .

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Yadava, N., Chauhan, R.K. (2020). Analysis of NaCl Electrolyte Based SOI-ISFET pH Sensor. In: Bhateja, V., Satapathy, S., Zhang, YD., Aradhya, V. (eds) Intelligent Computing and Communication. ICICC 2019. Advances in Intelligent Systems and Computing, vol 1034. Springer, Singapore. https://doi.org/10.1007/978-981-15-1084-7_9

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