Skip to main content

New Compact SEC-DED-DAEC Code for Memory Applications

  • Conference paper
  • First Online:

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 602))

Abstract

The demand of higher capacity, smaller size, and reliable memory is increasing with the continuous scaling of semiconductor technology with time. But reliability of memory is greatly influenced by soft errors caused due to radiation effects. These soft errors lead to corruption of data stored in one or multiple cells of memory. Error Correction Codes (ECCs) are frequently employed for mitigating the effects of soft errors in memories. Single Error Correction-Double Error Detection-Double Adjacent Errors Correction (SEC-DED-DAEC) code is one of the popularly known ECC schemes which is employed when Multiple Bit Upsets (MBUs) occur in memory. In this paper, a new SEC-DED-DAEC code has been proposed for memory applications. The proposed codecs have been designed and synthesized in FPGA platform for some common word lengths frequently used in memory applications. The performance of proposed codecs have been compared with other related works. The proposed codecs require lesser area compared to existing codecs.

This is a preview of subscription content, log in via an institution.

Buying options

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   129.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD   169.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

References

  1. Baumann, R.C.: Soft errors in advanced computer systems. IEEE Des. Test Comput. 22(3), 258–266 (2005)

    Article  Google Scholar 

  2. Chen, C.L., Hsiao, M.Y.: Error-correcting codes for semiconductor memory applications: a state-of-the-art review. IBM J. Res. Develop. 28(2), 124–134 (1984)

    Article  Google Scholar 

  3. Hsiao, M.Y.: A class of optimal minimum odd-weight-column SEC-DED codes. IBM J. Res. Dev. 14(4), 301–395 (1970)

    Article  Google Scholar 

  4. Ibe, E., Taniguchi, H., Yahagi, Y., Shimbo, K., Toba, T.: Impact of scaling on neutron-induced soft error in SRAMs from a 250 nm to a 22 nm design rule. IEEE Trans. Electron Devices 57(7), 1527–1538 (2010)

    Article  ADS  Google Scholar 

  5. Reviriego, P., Maestro, J.A., Baeg, S., Wen, S., Wong, R.: Protection of memories suffering MCUs through the selection of the optimal interleaving distance. IEEE Trans. Nucl. Sci. 57(4), 2124–2128 (2010)

    Article  ADS  Google Scholar 

  6. Neale, A., Sachdev, M.: A new SEC-DED error correction code subclass for adjacent MBU tolerance in embedded memory. IEEE Trans. Device Mater. Rel. 13(1), 223–230 (2013)

    Article  Google Scholar 

  7. Naseer R., Draper, J.: Parallel double error correcting code design to mitigate multi-bit upsets in SRAMs. In: Proceedings of the 34th European Solid State Circuits Conference, pp. 222–225 (2008)

    Google Scholar 

  8. Pontarelli, S., Reviriego, P., Ottavi, M., Maestro, J.A.: Low delay single symbol error correction codes based on reed solomon codes. IEEE Trans. Comput. 64(5), 1497–1501 (2015)

    Article  MathSciNet  MATH  Google Scholar 

  9. Neale, A.: Design and analysis of an adjacent multi-bit error correcting code for nanoscale SRAMs, Ph.D. Thesis (2014)

    Google Scholar 

  10. Dutta, A., Touba, N.A.: Multiple bit upset tolerant memory using a selective cycle avoidance based SEC-DED-DAEC code. In: Proceedings 25th IEEE VLSI Test Symposium, pp. 349–354 (2007)

    Google Scholar 

  11. Ming, Z., Yi, X.L., Wei, L.H.: New SEC-DED-DAEC codes for multiple bit upsets mitigation in memory. In: Proceedings IEEE/IFIP 20th International Conference VLSI Systems Chip, pp. 254–259 (2011)

    Google Scholar 

  12. Dutta, A.: Low cost adjacent double error correcting code with complete elimination of miscorrection within a dispersion window for multiple bit upset tolerant memory. In: Proceedings IEEE/IFIP 20th International Conference VLSI Systems Chip, pp. 287–290 (2012)

    Google Scholar 

  13. Reviriego, P., Martínez, J., Pontarelli, S., Maestro, J.A.: A method to design SEC-DED-DAEC codes with optimized decoding. IEEE Trans. Device Mater. Reliab. 14(3), 884–889 (2014)

    Google Scholar 

  14. Lin, S., Costello, D.J.: Error Control Coding: Fundamentals and Applications. Prentice-Hall (1983)

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Raj Kumar Maity .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2020 Springer Nature Singapore Pte Ltd.

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Maity, R.K., Samanta, J., Bhaumik, J. (2020). New Compact SEC-DED-DAEC Code for Memory Applications. In: Kundu, S., Acharya, U.S., De, C.K., Mukherjee, S. (eds) Proceedings of the 2nd International Conference on Communication, Devices and Computing. ICCDC 2019. Lecture Notes in Electrical Engineering, vol 602. Springer, Singapore. https://doi.org/10.1007/978-981-15-0829-5_32

Download citation

  • DOI: https://doi.org/10.1007/978-981-15-0829-5_32

  • Published:

  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-15-0828-8

  • Online ISBN: 978-981-15-0829-5

  • eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

Publish with us

Policies and ethics