Abstract
Strained Silicon Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) has already proven to be a superb candidate for high-speed electronic devices. A novel strained heterostructure device has been developed consisting of Si/SiGe/Si layer in the channel forming hetero-layered MOS structure. To develop a mature and in-depth understanding of the heterolayer, the analysis for study of behavior and characteristics has been the crux of in this recent works. Thus, the need of understanding this advanced structure through capacitance–voltage (CV) became the essentiality and most fundamental onus leading to device modeling and thorough expectation and control of the device performance.
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Dhar, R.S., Khiangte, L., Sultana, P., Kumar, A. (2020). Analysis of Capacitance–Voltage Characteristics for Ultrathin Si/SiGe/Si Hetero-Layered MOS Structure. In: Jain, L., Virvou, M., Piuri, V., Balas, V. (eds) Advances in Bioinformatics, Multimedia, and Electronics Circuits and Signals. Advances in Intelligent Systems and Computing, vol 1064. Springer, Singapore. https://doi.org/10.1007/978-981-15-0339-9_8
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