Abstract
A simulation study of the high gain effect of reach-through solid-state impact ionization multipliers (SIMs) is reported. This design combines the advances of Si avalanche photodiodes (APDs) used in LiDARs and SIMs. The SIMs without reach-through design have gain of 3 at the voltage of 15 V. With the help the optimized reach-through design, the reach-through SIMs obtain high gain of 5500 at the voltage of 15 V. The optimized design has great potential for future application in LiDARs for autonomous driving.
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Acknowledgements
This work was supported in part by the Shenzhen Fundamental Research fund under Grant (No. JCYJ20170306100015508).
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Geng, Y., Li, Q., Qiu, W. (2020). Simulation Study of the High Gain Effect of Reach-Through Solid-State Impact Ionization Multipliers. In: Jain, V., Patnaik, S., Popențiu Vlădicescu, F., Sethi, I. (eds) Recent Trends in Intelligent Computing, Communication and Devices. Advances in Intelligent Systems and Computing, vol 1006. Springer, Singapore. https://doi.org/10.1007/978-981-13-9406-5_53
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DOI: https://doi.org/10.1007/978-981-13-9406-5_53
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