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Electronic Properties of Dilute Bismides

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Bismuth-Containing Alloys and Nanostructures

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 285))

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Abstract

In this chapter, electronic properties of dilute bismide III-V semiconductors are reviewed briefly. Theoretical and computational methods are collected and discussed extensively. Empirical models, including tight-binding (TB) model, band anti-crossing (BAC), valance band anti-crossing (VBAC), and k·p model, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been used to investigate many kinds of Bi-containing compounds, such as models of bulk, surface, and nanostructure. Several combined methods are also reviewed.

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Acknowledgements

We would like to express our faithful appreciation to Xianlong Zhang, Wanting Shen, Junyu Zhang, and Kailin Wang, who graduated from Beijing University of Posts and Telecommunications, for their support in theoretical calculations. We also would like to thank for Prof. Pengfei Guan’s many fruitful collaborations and effective discussions. Finally, we gratefully acknowledge NSFC (No. 61675032), National Key Research and Development Program of China (No. 2017YFB0405100), and the Open Program of State Key Laboratory of Functional Materials for Informatics for funding our theoretical investigations discussed in this chapter.

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Authors and Affiliations

  1. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Pengfei Lu, Dan Liang, Xiaoning Guan, Qian Wang, Huiyan Zhao & Liyuan Wu

Authors
  1. Pengfei Lu
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  2. Dan Liang
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  3. Xiaoning Guan
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  4. Qian Wang
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  5. Huiyan Zhao
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  6. Liyuan Wu
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Corresponding author

Correspondence to Pengfei Lu .

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Editors and Affiliations

  1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

    Shumin Wang

  2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, China

    Pengfei Lu

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Lu, P., Liang, D., Guan, X., Wang, Q., Zhao, H., Wu, L. (2019). Electronic Properties of Dilute Bismides. In: Wang, S., Lu, P. (eds) Bismuth-Containing Alloys and Nanostructures. Springer Series in Materials Science, vol 285. Springer, Singapore. https://doi.org/10.1007/978-981-13-8078-5_1

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