Abstract
This chapter presents design and analysis of various types of microwave switches using p-i-n diodes and transistors. It describes series-, shunt-, TEE- and \(\pi\)-type switches with their merits and demerits. Various applications of active switches in microwave communications are also presented.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Caulton M, Rosen A, Stabile A, Gombar A (1982) Pin diodes for low frequency high power switching application. IEEE Trans Microw Theory Tech MTT-30:875–886
Caverly RH, Hiller G (1990) Establishing the minimum reverse bias for a p-i-n diode in a high-power switch. IEEE Trans Microw Theory Tech 38:1938–1943
Drozdovskaia L (2001) RF and microwave frequency properties of a reverse-biased thick switching p-i-n diode. IEEE Trans Microw Theory Tech 49(8):1370–1373
Bludov AV, Boltovets MS, Vassilevski KV, Zorenko AV, Zekentes K, Krivutsa VA, Kritskaya TV, Lebedev AA (2004) Microwave switching, based on 4H-SiC p-i-n diodes. Tech Phys Lett 30(2):123–125
Camara N, Zekentes K, Romanov LP, Kirillov AV, Boltovets MS, Vassilevski KV, Haddad G (2006) Microwave p-i-n diodes and switches based on 4H-SiC. IEEE Electron Device Lett 27(2):108–110
Gopinath A, Rankin JB (1985) GaAs FET RF switches. IEEE Trans Electron Devices ED-32:1272–1278
Makioka S, Anda Y, Miyatsuji K, Ueda D (2001) Super self-aligned GaAs RF switch IC with 0.25 dB extremely low insertion loss for mobile communication systems. IEEE Trans Electron Devices 48(8):1510–1514
Yang Z, Hu X, Yang J, Simin G, Shur M, Gaska R (2009) Maximum powers of low-loss series-shunt FET RF switches. Solid-State Electron 53:117–119
Campbell C, Dumka D (2010) Wideband high power GaN on SiC SPDT switch MMICs. IEEE MTT-S, IMS 2010, Anaheim, CA, USA, pp 145–148
Prasad A, Fager C, Thorsell M, Andersson CM, Yhland K (2014) Symmetrical large-signal modeling of microwave switch FETs. IEEE Trans Microw Theory Tech 62(8):1590–1598
Simin G, Hu X, Ilinskaya N, Kumar A, Koudymov A, Zhang J, Khan MA, Gaska R, Shur MS (2000) A 7.5 kW/mm current switch using AlGaN/GaN metal–oxide–semiconductor heterostructure field effect transistors on SiC substrates. Electron Lett 36:2043–2044
Ishida H, Hirose Y, Murata T, Kanda A, Ikeda Y, Matsuno T, Inoue K, Uemoto Y, Tanaka T, Egawa T, Ueda D (2003) A high power Tx/Rx switch IC using AIGaN/GaN HFETs. In: IEDM technical digest, pp 583–586
Koudymov A, Rai S, Adivarahan V, Gaevski M, Yang J, Simin G, Khan MA (2004) Monolithically integrated high-power broad-band RF switch based on III-N insulated gate transistors. IEEE Microw Wireless Compon Lett 14(12):560–562
Kaper V, Thompson R, Prunty T, Shealy JR (2004) Monolithic AlGaN/GaN HEMT SPDT switch. In: Proceedings of 12th GAAS symposium, Amsterdam, The Netherlands, pp 84–86
Sattu A, Yang J, Shur M, Gaska R, Simin G (2010) AlGaN/GaN Microwave switch with hybrid slow and fast gate design. IEEE Electron Device Lett 31(12):10389–1391
Sattu A, Billingsley D, Deng J, Yang J, Simin G, Shur M, Gaska R (2011) Low-loss AlInN/GaN microwave switch. Electronics Lett 47(15)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2019 Springer Nature Singapore Pte Ltd.
About this chapter
Cite this chapter
Bera, S.C. (2019). Microwave Switches. In: Microwave Active Devices and Circuits for Communication. Lecture Notes in Electrical Engineering, vol 533. Springer, Singapore. https://doi.org/10.1007/978-981-13-3004-9_8
Download citation
DOI: https://doi.org/10.1007/978-981-13-3004-9_8
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-13-3003-2
Online ISBN: 978-981-13-3004-9
eBook Packages: EngineeringEngineering (R0)