Abstract
In this chapter, we report on thin-film transistors (TFTs) with high performance and high stability using a solution-processed ZrInZnO (ZIZO) film as an active layer. In Sect. 18.1, the effects of adding Zr to In–Zn–O, particularly the electrical characteristics of their thin films and TFTs, were systematically investigated. The Zr addition effectively controlled oxygen vacancies because of the low standard electrode potential of Zr, which was confirmed by modifications in the optical bandgap energy, carrier concentration, and oxygen-vacancy density of the ZIZO thin films. Consequently, the off current decreased and the threshold voltage increased with increasing Zr content. The optimal ZIZO TFT was obtained at the Zr/In/Zn mole ratio of 0.05:2:1, and its “on/off” ratio, channel mobility, and subthreshold swing voltage were ~109, 6.23 cm2 V−1 s−1, and 0.19 V/dec, respectively. Not only the performance but also the bias–stress stability was improved as a result of the reduced interface charge trapping nature of ZIZO TFTs.
In Sect. 18.2, a polysilazane-based SiO2 gate insulator, which is also a solution processable material, is investigated to get the maximum out of a ZrInZnO semiconductor in a TFT. A smooth interface without defects was confirmed in the ZrInZnO/SiO2 system. The gate leakage current was reduced to 1 × 10−8 A/cm2 at 1 MV/cm. The resulting TFTs exhibited a field-effect mobility of 19–29 cm2 V−1 s−1 with a low leakage current of less than 9 × 10−11 A.
The third example of all-solution-processed TFT, in which all the layers were fabricated using simple solution process, is introduced in Sect. 18.3. In particular, our original combination of amorphous lanthanum zirconium oxide (LaZrO) and zirconium–indium–zinc oxide (ZrInZnO) films was used as a gate insulator and channel layer, respectively. In addition to that, a ruthenium oxide film was used both for the gate and source/drain electrodes. The ultraviolet–ozone (UV/O3) treatment was also adopted to a channel layer to facilitate precursor decomposition and condensation processes. As a result, the obtained on/off ratio, subthreshold swing voltage, and channel mobility were ∼6 × 105, 250 mV/decade, and 5.80 cm2 V−1 s−1, respectively.
As an evolution of all-solution-processed TFT, we tried to fabricate an all-solution-processed active-matrix transistor array for a EPD (electrophoretic display). That is described in Sect. 18.4. In the case of an active-matrix TFT backplane, not only TFT layers but also the other additional layers are required, so fabrication is more complicated and difficult compared with a sole TFT. The developed TFTs exhibited a good operation, and the active-matrix-driven electrophoretic displays (AM-EPDs) with the resolution of 101.6 ppi were successfully fabricated using an all-solution process. Bistable black/white images were confirmed in these AM-EPDs for the first time.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
M. Takahashi, H. Kishida, A. Miyanaga, S. Yamazaki, Theoretical analysis of IGZO transparent amorphous oxide semiconductor, in Proceedings of the 15th International Display Workshop, Dec. 3, 2008, pp. 1637–1640
J.K. Jeong, H.W. Yang, J.H. Jeong, Y.-G. Mo, H.D. Kim, Origin of threshold voltage instability in indium–gallium–zinc oxide thin film transistors. Appl. Phys. Lett. 93(12), 123508-1–123508-3 (2008)
E. Chong, K.C. Jo, S.Y. Lee, High stability of amorphous hafnium–indium–zinc–oxide thin film transistor. Appl. Phys. Lett 96(15), 152102-1–152102-3 (2010)
A. Suresh, J.F. Muth, Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors. Appl. Phys. Lett. 92(3), 033502-1–033502-3 (2008)
R.B.M. Cross, M.M. De Souza, Investigating the stability of zinc oxide thin film transistors. Appl. Phys. Lett. 89(26), 263513-1–263513-3 (2006)
C.-G. Lee, A. Dodabalapur, Solution-processed zinc–tin oxide thin film transistors with low interfacial trap density and improved performance. Appl. Phys. Lett. 96(24), 243501-1–243501-3 (2010)
P. Gorrn, P. Holzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, S. Kipp, Stability of transparent zinc tin oxide transistors under bias stress. Appl. Phys. Lett. 90(6), 063502-1–063502-3 (2007)
K. Yong-Hoon, H. Jeong-In, P. Sung Kyu, Effect of zinc/tin composition ratio on the operational stability of solution-processed zinc–tin–oxide thin-film transistors. IEEE Electron Device Lett. 33(1), 50–52 (2012)
Y. Vygranenko, K. Wang, A. Nathan, Stable indium oxide thin-film transistors with fast threshold voltage recovery. Appl. Phys. Lett. 91(26), 263508-1–263508-3 (2007)
A.J. Flewitt, J.D. Dutson, P. Beecher, D. Paul, S.J. Wakeham, M.E. Vickers, C. Ducati, S.P. Speakman, W.I. Milne, M.J. Thwaites, Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process. Semicond. Sci. Technol. 24(8), 085002-1–085002-7 (2009)
J.W. Hennek, M.-G. Kim, M.G. Kanatzidis, A. Facchetti, T.J. Marks, Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors. J. Am. Chem. Soc. 134(23), 9593–9596 (2012)
W.H. Jeong, G.H. Kim, H.S. Shin, B.D. Ahn, H.J. Kim, M.-K. Ryu, K.-B. Park, J.-B. Seon, S.Y. Lee, Investigating addition effect of hafnium in InZnO thin film transistors using a solution process. Appl. Phys. Lett. 96(9), 093503-1–093503-3 (2010)
J.-S. Park, K. Kim, Y.-G. Park, Y.-G. Mo, H.D. Kim, J.K. Jeong, Novel ZrInZnO thin-film transistor with excellent stability. Adv. Mater. 21(3), 329–333 (2009)
G.H. Kim, W.H. Jeong, B.D. Ahn, H.S. Shin, H.J. Kim, H.J. Kim, M.-K. Ryu, K.-B. Park, J.-B. Seon, S.-Y. Lee, Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors. Appl. Phys. Lett. 96(16), 163506-1–163506-3 (2010)
D.N. Kim, D.L. Kim, G.H. Kim, S.J. Kim, Y.S. Rim, W.H. Jeong, H.J. Kim, The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors. Appl. Phys. Lett. 97(19), 192105-1–192105-3 (2010)
Y. Choi, G.H. Kim, W.H. Jeong, J.H. Bae, H.J. Kim, J.-M. Hong, J.-W. Yu, Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors. Appl. Phys. Lett. 97(16), 162102-1–162102-3 (2010)
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432(7016), 488–492 (2004)
J.P. Chang, Y.S. Lin, S. Berger, A. Kepten, R. Bloom, S. Levy, Ultrathin zirconium oxide films as alternative gate dielectrics. J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct. 19(16), 2137–2143 (2001)
N. Naghavi, A. Rougier, C. Marcel, C. Guéry, J.B. Leriche, J.M. Tarascon, Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target. Thin Solid Films 360(1/2), 233–240 (2000)
V. Srikant, D.R. Clarke, On the optical band gap of zinc oxide. J. Appl. Phys. 83(10), 5447–5451 (1998)
P.T. Tue, T. Miyasako, J. Li, H.T.C. Tu, S. Inoue, E. Tokumitsu, T. Shimoda, High-performance solution-processed ZrInZnO thin-film transistors. IEEE Trans. Electron Devices 60(1), 320–326 (2013)
Y. Kwon, Y. Li, Y.W. Heo, M. Jones, P.H. Holloway, D.P. Norton, Z.V. Park, S. Li, Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel. Appl. Phys. Lett. 84(14), 2685–2687 (2004)
E.H. Nicollian, J.R. Brews, MOS Physics and Technology (Wiley, New York, 1981)
S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981)
G.H. Kim, H.S. Kim, H.S. Shin, B.D. Ahn, K.H. Kim, H.J. Kim, Inkjet-printed InGaZnO thin film transistor. Thin Solid Films 517(15), 4007–4010 (2009)
C. Morant, J.M. Sanz, L. Galán, L. Soriano, F. Rueda, An XPS study of the interaction of oxygen with zirconium. Surf. Sci. 218(2/3), 331–345 (1989)
Y. Jeong, C. Bae, D. Kim, K. Song, K. Woo, H. Shin, G. Cao, J. Moon, Bias-stress-stable solution-processed oxide thin film transistors. ACS Appl. Mater. Interfaces 2(3), 611–615 (2010)
R. Martins, P. Barquinha, I. Ferreira, L. Pereira, G. Goncalves, E. Fortunato, Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors. J. Appl. Phys. 101(4), 044505-1–044505-7 (2007)
W. Lim, E.A. Douglas, D.P. Norton, S.J. Pearton, F. Ren, Y.-W. Heo, S.Y. Son, J.H. Yuh, Low-voltage indium gallium zinc oxide thin film transistors on paper substrates. Appl. Phys. Lett. 96(5), 053510-1–053510-3 (2010)
M.S. Grover, P.A. Hersh, H.Q. Chiang, E.S. Kettenring, J.F. Wager, D.A. Keszler, Thin-film transistors with transparent amorphous zinc indium tin oxide channel layer. J. Phys. D. Appl. Phys. 40(5), 1335–1335 (2007)
F.R. Libsch, J. Kanicki, Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous thin-film transistors. Appl. Phys. Lett. 62(11), 1286–1288 (1993)
M.J. Powell, The physics of amorphous-silicon thin-film transistors. IEEE Trans. Electron Devices 36(12), 2753–2763 (1989)
K.M. Kim, C.W. Kim, J.-S. Heo, H. Na, J.E. Lee, C.B. Park, J.-U. Bae, C.-D. Kim, M. Jun, Y.K. Hwang, S.T. Meyers, A. Grenville, D.A. Keszler, Competitive device performance of low-temperature and all-solution-processed metal–oxide thin-film transistors. Appl. Phys. Lett. 99(24), 242109-1–242109-3 (2011)
M. Mativenga, M.H. Choi, J.W. Choi, J. Jang, Transparent flexible circuits based on amorphous-indium–gallium–zinc–oxide thin-film transistors. IEEE Electron Device Lett. 32(2), 170–172 (2011)
M. Mativenga, J.K. Um, D.H. Kang, R. Mruthyunjaya, J.H. Chang, G.N. Heiler, T.J. Tredwell, J. Jang, Edge effects in bottom-gate inverted staggered thin-film transistors. IEEE Trans. Electron Devices 59(2), 2501–2506 (2012)
E. Fortunato, P. Barquinha, R. Martins, Oxide semiconductor thin film transistors: A review of recent advances. Adv. Mater. 24(22), 2945–2986 (2012)
I. Yudasaka, H. Tanaka, M. Miyasaka, S. Inoue, T. Shimoda, Poly-Si thin-film transistors using polysilazane-based spin-on glass for all dielectric layers. SID Int. Symp. Dig. Tech. Papers 35(1), 964–967 (2004)
J.L. Yeh, S.C. Lee, Amorphous-silicon thin-film transistor with liquid phase deposition of silicon dioxide gate insulator. IEEE Electron Device Lett. 20(3), 138–139 (1999)
H. Kozuka, M. Fujita, S. Tamoto, Polysilazane as the source of silica: The formation of dense silica coatings at room temperature and the new route to organic–inorganic hybrids. J. Sol-Gel Sci. Technol. 48(1/2), 148–155 (2008)
K. Kamiya, T. Tange, T. Hashimoto, H. Nasu, Y. Shimuzu, Formation process of silica glass thin films from perhydropolysilazane. Res. Rep. Faculty Eng. Mie Univ. 26(12), 23–31 (2001)
H.T.C. Tu, S. Inoue, P.T. Tue, T. Miyasako, T. Shimoda, Investigation of Polysilazane-Based SiO2 Gate Insulator for Oxide Semiconductor Thin-Film Transistors. IEEE Trans. Electron Devices 60(3), 1149–1153 (2013)
H. Xie, J. Wei, X. Zhang, Characterisation of sol-gel thin films by spectroscopic ellipsometry. J. Phys. Conf. Ser. 28(1), 95–99 (2006)
P.T. Tue, T. Miyasako, J. Li, H.T.C. Tu, S. Inoue, E. Tokumitsu, T. Shimoda, High-performance solution-processed ZrInZnO thin-film transistors. IEEE Trans. Electron Devices 60(1), 320–326 (2013)
N. Primeau, C. Vautey, M. Langlet, The effect of thermal annealing on aerosol-gel deposited SiO2 films: A FTIR deconvolution study. Thin Solid Films 310(1/2), 47–56 (1997)
G. Lucovsky, J. Yang, S.S. Chao, J.E. Tyler, W. Czubatyj, Nitrogen-bonding environments in glow-discharge-deposited a-Si:H films. Phys. Rev. B Condens. Matter 28(6), 3234–3240 (1983)
C.H. Liu, T.K. Lin, S.J. Chang, GaAs MOS capacitors with photo-CVD SiO2 insulator layers. Solid State Electron. 49(7), 1077–1080 (2005)
K.Y. Cheong, W. Bahng, N.K. Kim, Analysis of charge conduction mechanisms in nitrided SiO2 Film on 4H SiC. Phys. Lett. A 372(4), 529–532 (2008)
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, USA, 1981), pp. 402–404
Y.K. Moon, S. Lee, W.S. Kim, B.W. Kang, C.O. Jeong, D.H. Lee, J.W. Park, Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator. Appl. Phys. Lett. 95(1), 013507-1–013507-3 (2009)
P. Barquinha, A.M. Vila, G. Goncalves, L. Pereira, R. Martins, J.R. Morante, E. Fortunato, Gallium–indium–zinc-oxide-based thinfilm transistors: Influence of the source/drain material. IEEE Trans. Electron Devices 55(4), 954–960 (2008)
P.T. Tue, J. Li, T. Miyasako, S. Inoue, T. Shimoda, Low-temperature all-solution-derived amorphous oxide thin-film transistors. IEEE Electron Device Lett. 34, 1536–1538 (2013)
T. Miyasako, B.N.Q. Trinh, M. Onoue, et al., Totally solution-processed ferroelectric-gate thin-film transistor. Appl. Phys. Lett. 97, 173509-1–173509-3 (2010)
C. Guerrero, J. Roldán, C. Ferrater, et al., Growth and characterization of epitaxial ferroelectric PbZrx Ti1−xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications. Solid State Electron. 45, 1433–1440 (2001)
Y. Zhao, K. Kita, K. Kyuno, et al., Dielectric and electrical properties of amorphous La1−xTaxOy films as higher-k gate insulators. J. Appl. Phys 105, 034103-1–034103-5 (2009)
K.K. Banger, Y. Yamashita, K. Mori, et al., Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. Nature Mater. 10, 45–50 (2011)
K. Umeda, T. Miyasako, A. Sugiyama, et al., Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors. J. Appl. Phys 113(18), 184509-1–184509-6 (2013)
S. Jeong, Y.G. Ha, J. Moon, et al., Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors. Adv. Mater. 22, 1346–1350 (2010)
S. Inoue, P.T. Tue, T. Hori, H. Koyama, T. Shimoda, Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process. Phys. Status Solidi A 212(10), 2133–2140 (2015). https://doi.org/10.1002/pssa.201532082
Y. Murakami, P.T. Tue, H. Tsukada, J. Li, T. Shimoda, IDW Tech. Dig. 1573 (2013)
D.J. Yun, H.M. Ra, S.B. Jo, W. Maeng, S.H. Lee, S. Park, J.W. Jang, K. Cho, S.W. Rhee, ACS Appl. Phys. Mater. Interf. 4, 4588 (2012)
T.E. Hong, K.Y. Mun, S.K. Choi, J.Y. Park, S.H. Kim, T. Cheon, W.K. Kim, B.Y. Lim, S. Kim, Thin Solid Films 520, 6100 (2012)
S. Bhaskar, P.S. Dobal, S.B. Majumder, R.S. Katiyay, J. Appl. Phys. 89, 2987 (2001)
R.M. Pasquarelli, D.S. Ginley, R. O’Hayre, Chem. Soc. Rev. 40, 5406 (2011)
J.F. Tressler, K. Watanabe, M. Tanaka, J. Am. Ceram. Soc. 79, 525 (1996)
P.T. Tue, J. Li, T. Miyasako, S. Inoue, T. Shimoda, IEEE Election Device Lett. 34, 1536 (2013)
T. Kaneda, D. Hirose, T. Miyasako, P.T. Tue, Y. Murakami, S. Kohara, J. Li, T. Mitani, E. Tokumitsu, T. Shimoda, J. Mater. Chem. C 2, 40 (2014)
H.T.C. Tu, S. Inoue, P.T. Tue, T. Miyasako, T. Shimoda, IEEE Trans. Electron Devices 60, 1149 (2013)
I. Ota, U.S. Patent 3 668 109, June 6, 1972
S. Inoue, S. Kanbe, T. Ozawa, Y. Kobashi, H. Kawai, T. Kitagawa, T. Shimoda, IEDM Tech. Dig. 197 (2000)
S. Inoue, H. Kawai, S. Kanbe, T. Saeki, T. Shimoda, IEEE Trans. Electron Devices 49, 1532 (2002)
B. Comiskey, J.D. Albert, J. Jacobson, SID Tech. Dig. 75 (1997)
E. Nakamura, H. Kawai, N. Kanae, H. Yamamoto, SID Tech. Dig. 1014 (1998)
P. Drzaic, B. Comiskey, J.D. Albert, L. Zhang, A. Loxley, R. Feeney, SID Tech. Dig. 1131 (1998)
H. Kawai, N. Kanae, SID Tech. Dig. 1102 (1999)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2019 Springer Nature Singapore Pte Ltd.
About this chapter
Cite this chapter
Shimoda, T. (2019). Thin-Film Oxide Transistor by Liquid Process (3): TFTs with ZrInZnO Channel. In: Nanoliquid Processes for Electronic Devices. Springer, Singapore. https://doi.org/10.1007/978-981-13-2953-1_18
Download citation
DOI: https://doi.org/10.1007/978-981-13-2953-1_18
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-13-2952-4
Online ISBN: 978-981-13-2953-1
eBook Packages: Chemistry and Materials ScienceChemistry and Material Science (R0)