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Hybrid WSe2-In2O3 Phototransistors with Ultrahigh Detectivity

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Infrared Photodetectors Based on Low-Dimensional Materials

Part of the book series: Springer Theses ((Springer Theses))

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Abstract

This chapter will introduce a hybrid phototransistor consisting of a single In2O3 nanowire as the channel material and a multilayer WSe2 nanosheet as the decorating sensitizer for photodetection. By the unique design of energy band alignment of the channel and sensitizer materials, an enhanced photogating effect is realized in the depletion regime of the device, leading to a superior detectivity over broadband spectra.

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Authors and Affiliations

  1. Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, China

    Nan Guo

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  1. Nan Guo
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Correspondence to Nan Guo .

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Guo, N. (2018). Hybrid WSe2-In2O3 Phototransistors with Ultrahigh Detectivity. In: Infrared Photodetectors Based on Low-Dimensional Materials. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-13-2838-1_4

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