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Fabrication of SiC MEMS Sensors

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Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Part of the book series: SpringerBriefs in Applied Sciences and Technology ((BRIEFSAPPLSCIENCES))

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Abstract

This chapter describes the approaches for the growth of high-quality silicon carbide. The doping methods for n-type and p-type SiC with the inclusion of selective doping are presented. Various fabrication strategies are introduced, including wet etching and oxidation. Fundamental properties of Ohmic and Schottky contacts to SiC are included. This chapter also gives brief examples of fabrication processes to achieve standard MEMS structures such as cantilevers and membranes.

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Authors and Affiliations

  1. Queensland Micro- and Nanotechnology Centre (QMNC), Griffth University, Brisbane, QLD, Australia

    Toan Dinh

  2. Queensland Micro- and Nanotechnology Centre (QMNC), Griffith University, Brisbane, QLD, Australia

    Nam-Trung Nguyen

  3. School of Engineering and Built Environment, Griffith University, Southport, QLD, Australia

    Dzung Viet Dao

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  1. Toan Dinh
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  2. Nam-Trung Nguyen
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  3. Dzung Viet Dao
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Correspondence to Toan Dinh .

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Dinh, T., Nguyen, NT., Dao, D.V. (2018). Fabrication of SiC MEMS Sensors. In: Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-13-2571-7_4

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