Abstract
This chapter presents the general background on silicon carbide as a functional semiconductor for sensors operating in harsh environments. The fundamental stacking orders of different SiC polytypes with common growth methods and conditions are introduced, with a focus on cubic silicon carbide (3C-SiC) and hexagonal silicon carbide (e.g. 4H-SiC and 6H-SiC). This chapter also introduces the thermoelectrical effect in SiC with respect to sensing properties at high temperatures. The importance of SiC materials with a wide range of applications in harsh environments will be mentioned.
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Dinh, T., Nguyen, NT., Dao, D.V. (2018). Introduction to SiC and Thermoelectrical Properties. In: Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-13-2571-7_1
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DOI: https://doi.org/10.1007/978-981-13-2571-7_1
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