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Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses

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Abstract

Piezoelectric devices such as ultrasonic motors, transformers, piezoelectric sensors, and actuators have been widely used in various industrial areas [1, 2]. Recently, interests in piezoelectric devices has increased considerably with the development of mobile devices. Pb(Zr1 − xTix)O3 (PZT)-based ceramics, thick films, and thin films have been generally used for these piezoelectric devices because of their excellent piezoelectric properties. However, since PZT-based materials contain more than 60 wt% PbO, which is toxic and evaporates during the synthesis process, they can pose serious environmental problems.

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  1. Korea Electronics Technology Institute, Seongnam, Korea (Republic of)

    Tae-Ho Lee

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Lee, TH. (2018). Literature Survey. In: Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-13-2535-9_2

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