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Engineering Vibration, Communication and Information Processing pp 9–14Cite as

Optimization of AlGaN QW Heterostructure for UV Applications

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 478))

Abstract

This paper reports the existence of ultraviolet (UV) optical gain in AlN/AlGaN/AlN nanoscale heterostructure consisting of 50 nm quantum well (QW) of AlGaN material sandwiched between layers of AlN material. The designed heterostructure is of type-I and assumed to be grown on GaN substrate. The optical gain of the heterostructure has been optimized utilizing k.p method. The simulation result shows that the peak optical gain in the AlGaN QW heterostructure lies at ~2400 Å (UV region) of the order of ~760 cm, which proves the potentiality of the AlN/AlGaN/AlN heterostructure as a source of UV radiations.

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Acknowledgements

Richa Dolia and P. A. Alvi are grateful to “DST, Govt. of India”, for granting the CURIE scheme to Banasthali Center for Research and Education in Basic Sciences.

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Authors and Affiliations

  1. Department of Electronics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

    Richa Dolia

  2. Department of Physics, Al-Hussein Bin Talal University, P.O. Box 20, Ma’an, Jordan

    M. Abu-Samak

  3. Department of Physics, Banasthali Vidyapith, Banasthali, 304022, Rajasthan, India

    P. A. Alvi

Authors
  1. Richa Dolia
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  2. M. Abu-Samak
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  3. P. A. Alvi
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Corresponding author

Correspondence to P. A. Alvi .

Editor information

Editors and Affiliations

  1. Amity School of Applied Sciences, Amity University Rajasthan, Jaipur, Rajasthan, India

    Kanad Ray

  2. Department of Electrical Engineering, Manipal University Jaipur, Jaipur, Rajasthan, India

    S. N. Sharan

  3. Department of Electronics and Communication Engineering, Manipal University Jaipur, Jaipur, Rajasthan, India

    Sanyog Rawat

  4. Department of Physics, Manipal University Jaipur, Jaipur, Rajasthan, India

    S. K. Jain

  5. Department of Information Technology, Manipal University Jaipur, Jaipur, Rajasthan, India

    Sumit Srivastava

  6. ANCC, National Institute for Materials Science, Tsukuba, Ibaraki, Japan

    Anirban Bandyopadhyay

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Dolia, R., Abu-Samak, M., Alvi, P.A. (2019). Optimization of AlGaN QW Heterostructure for UV Applications. In: Ray, K., Sharan, S., Rawat, S., Jain, S., Srivastava, S., Bandyopadhyay, A. (eds) Engineering Vibration, Communication and Information Processing. Lecture Notes in Electrical Engineering, vol 478. Springer, Singapore. https://doi.org/10.1007/978-981-13-1642-5_2

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  • DOI: https://doi.org/10.1007/978-981-13-1642-5_2

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-13-1641-8

  • Online ISBN: 978-981-13-1642-5

  • eBook Packages: EngineeringEngineering (R0)

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