Abstract
A comparative study has been carried out on the performance parameters of P-Channel Tunnel Field Effect Transistors (TFETs) using Graphene Nanoribbon (GNR) as channel material with those using Si, Ge, InAs, and InSb. The purpose of this paper is to find out the appropriate channel material of TFETs to achieve low-power and high performance for digital application. The energy band diagram of the device is obtained from the numerical solution of 1D Poisson equation subject to appropriate boundary conditions. An indigenously developed simulation software based on a self-consistent iterative method has been used for this purpose. The surface potential at the interface of gate dielectric and channel as well as barrier height are extracted from the energy band diagram. The drain current is calculated from the energy dependent tunneling probability and Fermi functions at the source and drain regions. It is observed that p+ TFETs with GNR as channel material provides higher on–off current ratio, better gate capacitance and lower intrinsic gate delay as compared to those with other channel materials.
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Goswami, J., Ganguly, A., Ghosal, A., Banerjee, J.P. (2019). Comparative Studies on the Performance Parameters of a P-Channel Tunnel Field Effect Transistor Using Different Channel Materials for Low-Power Digital Application. In: Mandal, J., Sinha, D., Bandopadhyay, J. (eds) Contemporary Advances in Innovative and Applicable Information Technology. Advances in Intelligent Systems and Computing, vol 812. Springer, Singapore. https://doi.org/10.1007/978-981-13-1540-4_6
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DOI: https://doi.org/10.1007/978-981-13-1540-4_6
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