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Chinese Materials Conference

CMC 2017: Advanced Functional Materials pp 355–361Cite as

GaSb-Based QWs 2 μm High Power Laser Diode

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Abstract

2 μm high-power GaSb-based type-I quantum well diode lasers were fabricated in this study. Under direct current, the output power of the lasers with uncoated cavity length of 2 mm and 100-μm-wide ridge is about 0.533 W with injection current of 3 A. The maximum conversion efficiency of single emitter is 12.67%. Under pulse current, the output power is 1.946 W with injection current of 14 A of 1 kHz and 5% duty cycle. The output power of the laser with coated cavity is increased to 2.466 W with injection pulsed current of 16 A.

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Found Program

National Basic Research Program of China (Grant Nos. 2014CB643903, 2013CB932904), the National Natural Science Foundation of China (Grant Nos. 61435012, 61274013).

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Authors and Affiliations

  1. School of Physics and Nuclear Energy Engineering, Beijing University of Aeronautics and Astronautics, Beijing, 100191, China

    Kelu Zhang & Jinliang Wang

  2. State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100083, China

    Kelu Zhang, Shengwen Xie, Yu Zhang, Yingqiang Xu, Jinliang Wang & Zhichuan Niu

  3. College of Materials Science and Optic-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408, China

    Shengwen Xie, Yu Zhang, Yingqiang Xu & Zhichuan Niu

Authors
  1. Kelu Zhang
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  2. Shengwen Xie
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  3. Yu Zhang
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  4. Yingqiang Xu
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  5. Jinliang Wang
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  6. Zhichuan Niu
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Corresponding author

Correspondence to Kelu Zhang .

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Editors and Affiliations

  1. Chinese Materials Research Society, Beijing, China

    Yafang Han

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© 2018 Springer Nature Singapore Pte Ltd.

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Cite this paper

Zhang, K., Xie, S., Zhang, Y., Xu, Y., Wang, J., Niu, Z. (2018). GaSb-Based QWs 2 μm High Power Laser Diode. In: Han, Y. (eds) Advanced Functional Materials. CMC 2017. Springer, Singapore. https://doi.org/10.1007/978-981-13-0110-0_40

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