Diffusion Bonding Properties of Large Dimension WTi Alloy Target Bonded to the Back Plate
In this paper, large dimension WTi alloy target for 12 in. wafers was respectively diffusion bonded to Al alloy, Cu alloy or Mo back plate. Then the properties test of the overall deformation after bonding, interface microstructure, bonding rate, tensile strength were conducted. The results showed that after the large dimension WTi alloy target bonded to the Al alloy or Cu alloy back plate, the overall deformation was large, the target was easily crack or debonding, so the reliability was poor. After the WTi alloy target bonded to the Mo back plate, the overall deformation was small, the bonding rate could reach more than 99%, and the tensile strength could be more than 50 MPa which was better than the traditional solder bonding strength (<5 MPa) and could meet the high power sputtering.
KeywordsSputtering target WTi alloy Diffusion bonding Back plate
- 1.Hiraki, and Akitoshi, U.S. Patent 5, 160, 534. (1992).Google Scholar
- 2.Daniel R. Marx, John C, Tungsten titanium targets for VLSI devices fabrication, J. Advanced Materials Division Technical Note. 202 (1994) 1–10.Google Scholar
- 3.Wondergem HJ, Heger A, Determination of W-Ti/Al thin film interaction by sheet resistance measurement, J. Thin Solid Films. 249 (1994) 6–10.Google Scholar
- 4.Dunlop JA, Rensing H, and etc, U.S. Patent 4, 838, 935. (1989).Google Scholar
- 5.LO Chi fung, and Gilman Paul, W.O. Patent 085, 203A1. (2015).Google Scholar
- 6.Gilman PS, Kulkarni S, and Blanchet, U.S. Patent 6, 164, 519. (2000).Google Scholar
- 7.Ivanov EY, and Conrad HW, U.S. Patent 6, 749, 103. (2004).Google Scholar
- 8.Lei Jifeng, J. Metallic functional materials. 20 (2013) 48–52.Google Scholar
- 9.Information on http://www.webelements.com.