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Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride pp 53–68Cite as

Growth of Large Single Crystalline Monolayer Boron Nitride Hexagons

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Abstract

Although h-BN films can be grown directly on dielectric substrates [1, 2], their quality are degraded due to the lack of epitaxial relation and uncontrolled nucleation resulting in the formation of nano-sized crystals. To obtain large-area high quality h-BN single crystals, metal catalytic substrates such as Cu and Ni are still required. It is observed that the h-BN domains tend to nucleate in the forms of triangular [3,4,5,6] or asymmetric diamond shape [4].

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Authors and Affiliations

  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2.1, 50 Nanyang Avenue, Singapore 639798, Singapore

    Roland Yingjie Tay

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Tay, R.Y. (2018). Growth of Large Single Crystalline Monolayer Boron Nitride Hexagons. In: Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-8809-4_5

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