Abstract
Recently, high quality large-area mono- to few-layer 2D h-BN films were synthesized on a variety of transition metals such as Cu, Ni and Pt substrates by CVD using AB as the precursor (Song et al. in Nano Lett 10(8):3209–3215, 2010 [1], Shi et al. in Nano Lett 10(10):4134–4139, 2010 [2], Kim et al. in Nano Lett 13(4):1834–1839, 2013 [3], Kim et al. in Nano Lett 12(1), 161–166, 2012 [4]). This CVD approach thus opens up a potentially industry acceptable technique as it adopts a similar paradigm to large-area thin film deposition methodology.
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Tay, R.Y. (2018). Growth of Nanocrystalline Boron Nitride Films on Dielectric Substrates. In: Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride. Springer Theses. Springer, Singapore. https://doi.org/10.1007/978-981-10-8809-4_4
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