Design and Simulation of OTA Using 45 nm Technology

Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 732)

Abstract

OTA is very popular in electronics industry due to its large number of applications. Double gate MOSFETs are strong contenders for nanoscale region due to its better control over SCEs. In this paper, emphasis is to design low power, better phase margin OTA using double gate MOSFETs. The simulations are done at 45 nm technology.

Keywords

Analog tunable circuits Gain Low supply voltage Phase margin DG MOSFETs OTA 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.C.Sc. DepartmentDAV CollegeJalandharIndia
  2. 2.ECE DepartmentCT InstitutionsJalandharIndia

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