Abstract
In this work, a novel approach has been investigated to overcome one of the major issue faced by Tunnel FETs i.e. its low drive current or On-current. The approach employed in the present work makes use of a non-rectangular tapered gate electrode geometry which helps in concentrating the electric field lines emanating from gate electrode towards the source/channel tunneling junction which results in enhancement in the band-to-band tunneling current.
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Authors would like to thank Council of Scientific & Industrial Research (CSIR), India (File No. 22(0724)/17/EMR-II)
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Narang, R., Gupta, M., Saxena, M. (2017). Improved Gate Modulation in Tunnel Field Effect Transistors with Non-rectangular Tapered Y-Gate Geometry. In: Kaushik, B., Dasgupta, S., Singh, V. (eds) VLSI Design and Test. VDAT 2017. Communications in Computer and Information Science, vol 711. Springer, Singapore. https://doi.org/10.1007/978-981-10-7470-7_46
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DOI: https://doi.org/10.1007/978-981-10-7470-7_46
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