Abstract
A 10 MHz, 84 μW PVT compensated ring oscillator is presented in 0.11 μm BCD9S (Bipolar CMOS DMOS) technology. The proposed ring oscillator is inherently temperature compensated and produces a frequency deviation of ±0.7% in typical corner, ±2.25% in slow corner and ±0.75% in fast corner around 10 MHz across −40 °C to 150 °C at a regulated supply of 1.8 V. The proposed oscillator exhibits less sensitivity to PVT variations and requires less area when compared to the state-of-the-art oscillators.
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Tyagi, V., Hashmi, M.S., Raj, G., Rana, V. (2017). A 10 MHz, 73 ppm/°C, 84 µW PVT Compensated Ring Oscillator. In: Kaushik, B., Dasgupta, S., Singh, V. (eds) VLSI Design and Test. VDAT 2017. Communications in Computer and Information Science, vol 711. Springer, Singapore. https://doi.org/10.1007/978-981-10-7470-7_16
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DOI: https://doi.org/10.1007/978-981-10-7470-7_16
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