A Top-Down Approach for Fabrication of Nanorods on GaN-Based LEDs Using Self-Assembled Ni
In optoelectronic devices such as LEDs, LASERs, strain-induced piezoelectric polarization occurs in the structure because of large lattice mismatch occurs between sapphire substrate and GaN layers. This degrades the performance of these devices due to strain-induced piezoelectric polarization. Nanostructuring can reduce this stress due to reduction in quantum-confined stark effect (QCSE) and strain-releasing effect. We demonstrate a top-down approach for fabricating GaN nanorods on LED using self-assembled nickel as an etching mask during reactive ion etching (RIE). The self-assembled Ni islands were formed by rapid thermal annealing at 850 °C for 1 min followed by RIE. The shape and morphology of GaN nanorods were studied using scanning electron microscopy (SEM). We realized vertical array of nanorods with dimensions varying from 90–200 nm.
KeywordsGallium nitride (GaN) Nanorods Top-down approach Nanomasking Quantum-confined stark effect (QCSE)
This work was carried out in Council of Scientific and Industrial Research-Central Electronics And Engineering Research Institute (CSIR-CEERI), Pilani. The author would like to thank Dr. Manish Mathew for providing the experimental support. The author is thankful to Dr. Vijay Janyani for his valuable suggestions during this work.
- 17.Kumar A, Latzel M, Tessarek C, Christiansen S, Singh R (2013) Characterization of GaN nanorods fabricated using Ni nanomasking and reactive ion etching: a top-down approach. J Nano-Electron Phys 5(2):2001–1Google Scholar