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A Novel Fractal Stacked Inductor Using Modified Hilbert Space Filling Curve for RFICs

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Microelectronics, Electromagnetics and Telecommunications

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 471))

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Abstract

High quality factor miniaturized inductors are prerequisites of RFIC applications. This paper presents a novel fractal stacked inductors using modified Hilbert space filling curve. The proposed inductor is constructed in series stack fashion according to the process rules to achieve higher inductance values. Using the modified Hilbert structure, lateral flux is eliminated to achieve higher Q values. The results show that more than 90% improvement in L over conventional fractal inductor within same occupying area and more than 10% improvement in Q factor over standard stacked inductor.

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Author information

Authors and Affiliations

  1. Department of ECE, National Institute of Technology, Warangal, 506004, Telangana, India

    P. Akhendra Kumar & N. Bheema Rao

Authors
  1. P. Akhendra Kumar
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  2. N. Bheema Rao
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Corresponding author

Correspondence to P. Akhendra Kumar .

Editor information

Editors and Affiliations

  1. Department of Electronics and Telecommunication, Ramon Llull University, Barcelona, Spain

    Jaume Anguera

  2. Department of Computer Science and Engineering, PVP Siddhartha Institute of Technology, Vijayawada, Andhra Pradesh, India

    Suresh Chandra Satapathy

  3. Department of Electronics and Communication Engineering, SRMGPC, Lucknow, Uttar Pradesh, India

    Vikrant Bhateja

  4. BVRIT Hyderabad College of Engineering for Women, Hyderabad, Andhra Pradesh, India

    K.V.N. Sunitha

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Akhendra Kumar, P., Bheema Rao, N. (2018). A Novel Fractal Stacked Inductor Using Modified Hilbert Space Filling Curve for RFICs. In: Anguera, J., Satapathy, S., Bhateja, V., Sunitha, K. (eds) Microelectronics, Electromagnetics and Telecommunications. Lecture Notes in Electrical Engineering, vol 471. Springer, Singapore. https://doi.org/10.1007/978-981-10-7329-8_54

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  • DOI: https://doi.org/10.1007/978-981-10-7329-8_54

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-7328-1

  • Online ISBN: 978-981-10-7329-8

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