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35 W GaN Solid-State Driver Power Amplifier for L-Band Radar Applications

  • Vivek RatnaparkhiEmail author
  • Anil Hiwale
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 673)

Abstract

In this paper, 35 W driver power amplifier was designed and simulated using GaN HEMT for L-band radar. GaN HEMT is used because it can provide high output power and high gain as compared to other semiconductor technologies. The 35 W output power is generated using CGHV40030 GaN HEMT which is sufficient to drive further stages of power amplifier. The driver amplifier is designed at 1.3 GHz of center frequency. This amplifier is designed in class AB and 60.5% of PAE is achieved.

Keywords

Class AB GaN HEMT L-band radar PAE 

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Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  1. 1.Department of EXTCSSGMCEShegaonIndia
  2. 2.Department of ITMITCOEPuneIndia

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