Abstract
If we irradiate an electron beam onto a semiconductor, electrons and holes are generated within the volume where e-beam reaches. The generated carriers undergo diffusion and recombination to reach a new equilibrium. If there exists an electric field such as Schottky contact or p-n junction, the excess electrons and holes are collected by this field.
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Chen, J., Sekiguchi, T. (2018). Electron-Beam-Induced Current. In: The Surface Science Society of Japan (eds) Compendium of Surface and Interface Analysis. Springer, Singapore. https://doi.org/10.1007/978-981-10-6156-1_26
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DOI: https://doi.org/10.1007/978-981-10-6156-1_26
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