Advertisement

Contact Resistance-Dependent OTFT Behaviour: Effect of Channel Length

  • Shruti Nautiyal
  • Pranjali Nautiyal
  • Shubham Negi
  • Poornima Mittal
Conference paper
Part of the Advances in Intelligent Systems and Computing book series (AISC, volume 624)

Abstract

The charge injection occurs from contact metals into semiconductors can be inefficient process i.e., non-ohmic. This is due to significant difference amid work function of contact metal and lowest unoccupied molecular orbit (LUMO)/highest occupied molecular orbit (HOMO) level of n/p-organic semiconductor (OSC). Therefore, the contacts in OTFT drop a noteworthy sum of voltage due to occurrence of contact resistance. The effect of contact resistance can be observed at low channel length devices. The electrical characteristics and parameter extractions are done for SG-OTFT at various channel lengths, and the results are observed and analysed using organic module of Atlas 2-D simulator.

Keywords

Thin film transistor (TFT) Organic thin film field-effect transistor (OTFET) SG-OTFT (single gate organic thin film transistor) OSC (organic semiconductor) 

References

  1. 1.
    Klauk, H., Zschieschang, U., Halik, M.: Low-voltage organic thin-film transistors with large transconductance. Journal of Applied Physics, 102(7), 074514 (2007).Google Scholar
  2. 2.
    Kumar, B., Kaushik, B. K., Negi., Y. S.: Organic thin film transistors: Structures, Models, Materials, Fabrication, and Applications: A review, Polymer Review, Vol. 54:1, pp. 33–111 (2013, September).Google Scholar
  3. 3.
    Shim, C. H., Maruoka, F., Hattori, R.: Structural analysis on organic thin-film transistor with device simulation. IEEE Transactions on Electron Devices, 57(1), pp. 195–200 (2010).Google Scholar
  4. 4.
    Guo, W., Shen, L., Liu, C., Chen, W., Ma, D.: Analysis and extraction of contact resistance in pentacene thin film transistors. In Nano/Micro Engineered and Molecular Systems, NEMS 2008. 3rd IEEE International Conference, pp. 99–102 (2008, January).Google Scholar
  5. 5.
    Mittal, P., Negi, Y. S., Singh, R. K.: An analytical approach for parameter extraction in linear and saturation regions of top and bottom contact organic transistors. Journal of Computational Electronics, 14(3), pp. 828–843 (2015).Google Scholar
  6. 6.
    Khan, A. R., Yadav, S. C., Chauhan, S. S., Kumar, B., Kaushik, B. K., Negi, Y. S., Iyer, S. S. K. (2011, September). Vertical organic thin film transistor to achieve sub ten micron channel length devices. In 2011 2nd International Conference on Computer and Communication Technology (ICCCT-2011).Google Scholar
  7. 7.
    Gundlach, D. J., Zhou, L., Nichols, J. A., Jackson, T. N., Necliudov, P. V., & Shur, M. S. (2006). An experimental study of contact effects in organic thin film transistors. Journal of Applied Physics, 100(2), 024509.Google Scholar
  8. 8.
    Jung, K. D., Kim, Y. C., Park, B. G., Shin, H., Lee, J. D.: Modeling and parameter extraction for the series resistance in thin-film transistors. IEEE Trans. Electronic Devices 56, 431–440 (2009).Google Scholar
  9. 9.
    Necliudov, P. V., Shur, M. S., Gundlach, D. J., & Jackson, T. N. (2003). Contact resistance extraction in pentacene thin film transistors. Solid-State Electronics, 47(2), 259–262.Google Scholar
  10. 10.
    ATLAS user’s manual: Device simulation software. Silvaco International Santa Clara (2014). Google Scholar

Copyright information

© Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Shruti Nautiyal
    • 1
  • Pranjali Nautiyal
    • 1
  • Shubham Negi
    • 1
  • Poornima Mittal
    • 1
  1. 1.Graphic Era UniversityDehradunIndia

Personalised recommendations