Abstract
This paper deals with results of optimizing the structure and temperature effects leading to dark or noise current mitigation in quantum well IR photodetector (QWIP) using mathematical modeling. The quantum wells are formed by heteroepitaxial process where a narrow E GAP material between wide bandgap materials. Results show that the fine tuning of aluminum (Al) mole fraction and well-width helps in achieving high responsivity for the both near and far IR wavelength. Low noise operation, as well as comparative study, is done between the experimental and theoretical value for temperature analysis. The modeled QWIP detector consists of GaAs quantum wells and Al x Ga(1−x)As barriers. The temperature-based operation and analyses show the cause of band splitting, and reduction of noise is observed in MQW IR sensor structure. This type of QW finds application in broadband sensors used in unmanned aerial vehicles (UAV).
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Kumar, V., Lal, R.K. (2018). Effect of Temperature on Dark Current in QWIP for Unmanned Aerial Vehicles. In: Nath, V. (eds) Proceedings of the International Conference on Microelectronics, Computing & Communication Systems. Lecture Notes in Electrical Engineering, vol 453. Springer, Singapore. https://doi.org/10.1007/978-981-10-5565-2_29
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DOI: https://doi.org/10.1007/978-981-10-5565-2_29
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