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Advances in Electronics, Communication and Computing pp 199–209Cite as

From FET to SET: A Review

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Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 443))

Abstract

Scaling has played an important role in reducing the size of the transistor so as to govern the Moore’s law, but we cannot always simply scale down the size of the transistor without some deterioration in the performance of the transistor. These effects are termed as short-channel effects such as drain-induced barrier lowering, threshold voltage shift, leakage current, gate-induced drain lowering, hot carrier effect, etc. In this paper, we have reviewed different gated structures such as single gate, double gate, triple gate and gate all around which will control the electrostatic potential in the channel and reduce these short-channel effects. A molecular transistor, i.e., single electron transistor (SET) is also reviewed in this paper; SET shows better performance and reduced short-channel effects. In this molecular structure, either coulomb blockade or tunneling takes place, due to which it has better control over the flow of the electron.

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Author information

Authors and Affiliations

  1. Department of Electronic and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India

    Amit Agarwal & P. C. Pradhan

  2. Centre for Material Science and Nano Technology, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India

    Bibhu Prasad Swain

Authors
  1. Amit Agarwal
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  2. P. C. Pradhan
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  3. Bibhu Prasad Swain
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Corresponding author

Correspondence to Amit Agarwal .

Editor information

Editors and Affiliations

  1. Smart Energy Research Unit, College of Engineering and Science, Victoria University, Melbourne, VIC, Australia

    Akhtar Kalam

  2. Electronics and Communication Sciences Unit, Indian Statistical Institute, Kolkata, West Bengal, India

    Swagatam Das

  3. Department of Computer Science and Engineering, Sikkim Manipal Institute of Technology, Rangpo, Sikkim, India

    Kalpana Sharma

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Agarwal, A., Pradhan, P.C., Swain, B.P. (2018). From FET to SET: A Review. In: Kalam, A., Das, S., Sharma, K. (eds) Advances in Electronics, Communication and Computing. Lecture Notes in Electrical Engineering, vol 443. Springer, Singapore. https://doi.org/10.1007/978-981-10-4765-7_21

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  • DOI: https://doi.org/10.1007/978-981-10-4765-7_21

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-4764-0

  • Online ISBN: 978-981-10-4765-7

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