Abstract
Our main aim was to use ion implantation as an effective post-growth technique for improving the optical, electrical and spectral properties of In(Ga)As/GaAs QD heterostructures and devices. We had already seen in Chap. 2 that low-energy light ion implantation improved the material quality of InAs/GaAs QDs, whereas Chap. 4 showed that light ion implantation helped in suppression of dark current density of quaternary alloy-capped InAs/GaAs QDIPs. In order to achieve better electrical and spectral behaviour, low-energy light ion (H−) implantations were performed over quaternary alloy-capped InGaAs/GaAs QDIPs. A reduction in dark current density along with enhanced detectivity was measured for the implanted devices as discussed in this present chapter.
Portions of this chapter is reprinted from A. Mandal et al., “More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−)”, Applied Physics Letters, Vol. 102, pp. 051105, 2013, with permission from AIP Publishing.
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References
A. Mandal, A. Agarwal, H. Ghadi, K.C. Goma Kumari, A. Basu, et al., More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−). Appl. Phys. Lett. 102, 051105
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Mandal, A., Chakrabarti, S. (2017). Effects of Low-Energy Light Ion (H−) Implantation on Quaternary-Alloy-Capped InGaAs/GaAs Quantum Dot Infrared Photodetectors. In: Impact of Ion Implantation on Quantum Dot Heterostructures and Devices . Springer, Singapore. https://doi.org/10.1007/978-981-10-4334-5_5
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DOI: https://doi.org/10.1007/978-981-10-4334-5_5
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