Abstract
This chapter deals with the impact of both low-energy heavy ion (sulphur) and light ion (hydrogen) implantation over single-layer InAs/GaAs QDs. The material and structural properties of both un-implanted and implanted QDs are discussed, along with the results achieved through different characterizations. Sulphur (S−) ion implantation caused degradation of material quality whereas hydrogen (H−) ion implantation improved the material properties of InAs/GaAs QDs. The main purpose of this study was to optimize the particular ion and its energy and fluence range for experiencing the impact of ion implantation further on In(Ga)As/GaAs QD-based device structures as discussed in the following chapters.
Portions of this chapter is reprinted from 1. R. Sreekumar, A. Mandal, S. Chakrabarti and S. K. Gupta, “Effect of heavy ion implantation on self assembled single layer InAs/GaAs quantum dots,” Journal of Physics D: Applied Physics, Vol. 43, pp. 505302, 2010, © IOP Publishing. Reproduced by permission of IOP Publishing. All rights reserved, 2. R. Sreekumar et al., “H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots,” Journal of Luminescence, vol. 153, pp. 109–117, 2014, with permission from Elsevier.
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Mandal, A., Chakrabarti, S. (2017). Low-Energy Ion Implantation Over Single-Layer InAs/GaAs Quantum Dots. In: Impact of Ion Implantation on Quantum Dot Heterostructures and Devices . Springer, Singapore. https://doi.org/10.1007/978-981-10-4334-5_2
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DOI: https://doi.org/10.1007/978-981-10-4334-5_2
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