Abstract
This chapter deals with the basics of zero-dimensional quantum structures, i.e. quantum dots. An abridged explanation of its electronic properties is mentioned in this chapter. Different fabrication techniques for growing quantum dots are also chalked out in short. The advantages and disadvantages of self-assembled quantum dots are described in detail. Various in-situ and ex-situ techniques along with importance of different capping layers for improving electronic properties of self-assembled quantum dots are also referred in this chapter.
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References
M. Asada, Y. Miyamoto, Y. Suematsu, Gain and the threshold of three-dimensional quantum-box lasers. Quantum Electron., IEEE J. 22, 1915–1921 (1986)
Paul Harrison, Quantum Wells, Wires and Dots—Theoretical and Computational Physics of Semiconductor Nanostructures (Wiley, Chichester, U.K., 2005)
Mitsuru Sugawara, “Self-assembled InGaAs/GaAs Quantum Dots”, Semiconductors and Semimetals, vol. 60 (Academic Press, New York, USA, 1999)
B.S. Williams, H. Callebaut, S. Kumar, Q. Hu, J.L. Reno, 3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation. Appl. Phys. Lett. 82, 1015–1017 (2003)
F. Jerome, F. Capasso, C. Sirtori, D. Sivco, A. Hutchinson, A. Cho, Quantum Cascade Laser. Science 264, 553–556 (1994)
C.-F. Hsu, O. Jeong-Seok, P. Zory, D. Botez, Intersubband quantum-box semiconductor lasers. Sel. Topics Quantum Electron, IEEE J. 6, 491–503 (2000)
U. Bockelmann, G. Bastard, Phonon scattering and energy relaxation in two, one, and zero-dimensional electron gases. Phys. Rev. B 42, 8947 (1990)
H. Benisty, C. Sotomayor-Torres, C. Weisbuch, Intrinsic mechanism for the poor luminescence properties of quantum-box systems. Phys. Rev. B 44, 10945 (1991)
A. Mandal, A. Agarwal, H. Ghadi, Goma Kumari K.C., A. Basu et al., “More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−),” Applied Physics Letters, vol. 102, pp. 051105 (2013)
Jasprit Singh, Electronic and Optoelectronic Properties of Semiconductor Structures (Cambridge University Press, New York, USA, 2003)
Shun Lien Chuang, Physics of Photonic Devices (Wiley, New Jersey, USA, 2009)
D.A.B. Miller, Quantum Mechanics for Scientists and Engineers (Cambridge University Press, New York, USA, 2008)
Manijeh Razeghi, Technology of Quantum Devices (Springer, New York, USA, 2010)
D. Bimberg, M. Grundmann, N.N. Ledentsov, Quantum Dot Heterostructures (Wiley, Chichester, U.K., 1999)
Zhiming M. Wang, Self-assembled Quantum Dots (Springer, New York, USA, 2008)
Hongtao Jiang, Jasprit Singh, Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study. Phys. Rev. B 56, 4696–4701 (1997)
J. Tatebayashi, N. Nuntawong, P.-S. Wong, Y. Xin, L. Lester, D. Huffaker, Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices. J. Phys. D Appl. Phys. 42, 073002 (2009)
G. Solomon, J. Trezza, A. Marshall, J. Harris, JS, ‘Vertically aligned and electronically coupled growth induced InAs islands in GaAs”. Phys. Rev. Lett. 76, 952–955 (1996)
Ameenah Al-Ahmadi, Quantum Dots—A Variety of New Applications (InTech, Croatia, 2012)
J. Suseendran, N. Halder, S. Chakrabarti, T. Mishima, C. Stanley, Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs. Superlattices Microstruct. 46, 900–906 (2009)
N. Halder, R. Rashmi, S. Chakrabarti, C.R. Stanley, M. Herrera, N.D. Browning, A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self assembled InAs/GaAs QDs. Appl. Phys. A: Mater. Sci. and Process. 95, 713–720 (2009)
S. Sengupta, N. Halder, S. Chakrabarti, Investigation of effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dots heterostructure. Superlattices Microstruct. 46, 611–617 (2009)
E.C. Le Ru, P.D. Siverns, R. Murray, Luminescence enhancement from hydrogen-passivated self-assembled quantum dots. Appl. Phys. Lett. 77, 2446–2448 (2000)
G. Sasikala, I. Suemune, P. Thilakan, H. Kumano, K. Uesugi, Y. Nabetani, T. Matsumoto, H. Machida, “Structural and Luminescence Properties of InAs Quantum Dots: Effect of Nitrogen Exposure on Dot Surfaces,” Japanese J. Appl. Phys., vol. 44, pp. L 1512–L 1515 (2005)
S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning et al., Pulsed laser annealing of self-organized InAs/GaAs quantum dots. J. Electron. Mater. 33, L5–L8 (2004)
S. Adhikary, S. Chakrabarti, A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping. Mater. Res. Bull. 47, 3317–3322 (2012)
R. Leon, G. Swift, B. Magness, W. Taylor, Y. Tang, K. Wang et al., Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots. Appl. Phys. Lett. 76, 2074–2076 (2000)
R. Leon, S. Marcinkecius, J. Siegert, B. Cechavicius, B. Magness, W. Taylor et al., Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots. Nucl. Sci., IEEE Trans. 49, 2844–2851 (2002)
W. Lu, Y. Ji, G. Chen, N. Tang, X. Chen, S. Shen et al., Enhancement of room-temperature photoluminescence in InAs quantum dots. Appl. Phys. Lett. 83, 4300–4302 (2003)
Y. Ji, G. Chen, N. Tang, Q. Wang, X. Wang, J. Shao et al., Proton-implantation-induced photoluminescence enhancement in self-assembled InAs/GaAs quantum dots. Appl. Phys. Lett. 82, 2802–2804 (2003)
P. Bhattacharya, Z. Mi, Quantum-dot optoelectronic devices. Proc. IEEE 95, 1723–1740 (2007)
Christian Gilfert, Johann Peter P. Reithmaier, “Semiconductor Lasers for Sensor Applications,” Nanotechnological Basis for Advanced Sensors, NATO Science for Peace and Security Series B: Physics and Biophysics, pp. 333–353, (2011)
H.B. Wu, S.J. Xu, J. Wang, Impact of the cap layer on the electronic structure and optical properties of self-assembled InAs/GaAs quantum dots. Phys. Rev. B 74, 205329 (2006)
P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác, Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs. Superlattices Microstruct. 46, 324–327 (2009)
V.D. Dasika, J.D. Song, W.J. Choi, N.K. Cho, J.I. Lee, R.S. Goldman, Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation. Appl. Phys. Lett. 95, 163114 (2009)
J.S. Kim, J.H. Lee, S.U. Hong, W.S. Han, H.-S. Kwack, C.W. Lee, D.K. Oh, Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures. J. Appl. Phys. 94, 6603–6606 (2003)
V. Haxha, I. Drouzas, J.M. Ulloa, M. Bozkurt, P.M. Koenraad, D.J. Mowbray, H.Y. Liu, M.J. Steer, M. Hopkinson, M.A. Migliorato, Role of segregation in InAs/GaAs quantum dot structures capped with GaAsSb strain-reduction layer. Phys. Rev. B 80, 165331 (2009)
J.M. Ulloa, W.D.I. Drouzas, P.M. Koenraad, D.J. Mowbray, M.J. Steer, H.Y. Liu, M. Hopkinson, Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer. Appl. Phys. Lett. 90, 213105 (2007)
S. Chakrabarti, S. Adhikary, N. Halder, Y. Aytac, and A. Perera, “High-performance, long-wave (~ 10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping,” Appl. Phys. Lett., vol. 99, pp. 181102–181102-3, (2011)
S. Adhikary, N. Halder, S. Chakrabarti, S. Majumdar, S. Ray, M. Herrera et al., Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures. J. Cryst. Growth 312, 724–729 (2010)
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Mandal, A., Chakrabarti, S. (2017). Introduction to Quantum Dots. In: Impact of Ion Implantation on Quantum Dot Heterostructures and Devices . Springer, Singapore. https://doi.org/10.1007/978-981-10-4334-5_1
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DOI: https://doi.org/10.1007/978-981-10-4334-5_1
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