Abstract
The influence of strongly energetic photons on the carrier mass (CM) at the Fermi level in accumulation layers of MOSFET devices, has been investigated taking accumulation layers of InAs and InSb as examples. It has been observed that the CM decreases with decreasing surface electron concentration per unit area. The CM is a function of chemical potential, scattering potential and electric sub band index together with other physical variables, which is the characteristics features of such 2D systems.
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Acknowledgements
The authors are grateful to Prof. Dr. S. Chakrabarti, Director, Institute of Engineering and Management, Kolkata for inspiration and helpful discussion in the real sense of the term.
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Paul, R., Ghatak, S., Das, S., Mitra, M., Datta, T. (2017). Computational Analysis of Carrier Mass Under Energetic Photons in Accumulation Layers of MOSFET Devices. In: Bhattacharya, I., Chakrabarti, S., Reehal, H., Lakshminarayanan, V. (eds) Advances in Optical Science and Engineering. Springer Proceedings in Physics, vol 194. Springer, Singapore. https://doi.org/10.1007/978-981-10-3908-9_63
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DOI: https://doi.org/10.1007/978-981-10-3908-9_63
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