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Internal Quantum Efficiency

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III-Nitride Based Light Emitting Diodes and Applications

Part of the book series: Topics in Applied Physics ((TAP,volume 133))

Abstract

In the first part, we have introduced experimental results of the internal quantum efficiency (IQE) droop depending on temperature in both the electroluminescence and the resonant photoluminescence. The IQE droop mechanisms ever reported have been reviewed. An inherent origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in the InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current. The degree of saturation is determined by operating temperature and effective active volume. Although the saturation of the radiative recombination rate is common origin of the IQE droop, the shapes of the IQE versus current, i.e. the IQE droop curve, vary with the dominant nonradiative recombination process. In the second part, we have reviewed the IQE measurement methods theoretically as well as experimentally. A simple IQE estimation method based on the constant ABC model in the carrier rate equation is introduced in terms of its convenience and application limitation. Other methods have been also reviewed by focusing on all-optical methods such as the temperature-dependent photoluminescence (TDPL) and the temperature-dependent time-resolved photoluminescence (TD-TRPL) methods.

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Authors and Affiliations

  1. Hanyang University, ERICA campus, Seoul, Korea

    Jong-In Shim

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  1. Jong-In Shim
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Editors and Affiliations

  1. Department of Materials Science and Engineering, Korea University, Seoul, Korea (Republic of)

    Tae-Yeon Seong

  2. Department of Electrical Engineering, Yale University, New Haven, Connecticut, USA

    Jung Han

  3. Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, Japan

    Hiroshi Amano

  4. Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, USA

    Hadis Morkoç

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Shim, JI. (2017). Internal Quantum Efficiency. In: Seong, TY., Han, J., Amano, H., Morkoç, H. (eds) III-Nitride Based Light Emitting Diodes and Applications. Topics in Applied Physics, vol 133. Springer, Singapore. https://doi.org/10.1007/978-981-10-3755-9_7

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