Abstract
Since the development of metal-oxide-semiconductor field-effect transistor (MOSFET) started in 1950s, relevant technologies have been constantly improving (Sze and Ng in Physics of Semiconductor Devices. Wiley, New York, 2007 [1]).
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References
S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd ed (Wiley, New York, 2007)
TCAD Sentaurus Device, Synopsys SDevice Ver. J-2014.09 (Synopsys, Inc., Mountain View, CA, USA, 2014)
C.C. Hu, Modern Semiconductor Devices for Integrated Circuits (Pearson Education, Inc., 2010)
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Wu, YC., Jhan, YR. (2018). 2D MOSFET Simulation. In: 3D TCAD Simulation for CMOS Nanoeletronic Devices. Springer, Singapore. https://doi.org/10.1007/978-981-10-3066-6_2
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DOI: https://doi.org/10.1007/978-981-10-3066-6_2
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