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Crucial Aspects of the Device Processing of Quantum Cascade Lasers

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Terahertz (THz), Mid Infrared (MIR) and Near Infrared (NIR) Technologies for Protection of Critical Infrastructures Against Explosives and CBRN

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Abstract

The paper presents the studies on technology of ~100 μm-emitting (~3 THz) Al0.15Ga0.85As/GaAs QCLs, the optimized scheme of fabrication of such lasers was elaborated. It was a result of the extensive work on decreasing waveguide losses while ensuring the proper performance of the electrical contacts and effective heat removal. The fabrication comprises Au-based claddings and Au-Au-mounting process. The yielded lasers operate up to the maximum temperature Tmax = 140 K, with threshold current density Jth ~ 1 kA/cm2 at 77 K.

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Acknowledgments

This research was supported by The National Centre for Research and Development (bilateral cooperation, project no. 1/POLTUR-1/2016).

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Authors and Affiliations

  1. Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw, Poland

    A. Szerling, K. Kosiel, P. Prokaryn, M. Szymański, Z. Wasilewski, M. Płuska & M. Sakowicz

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  1. A. Szerling
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Correspondence to A. Szerling .

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Editors and Affiliations

  1. Department of Physics, Khalifa University of Science and Technology, Abu Dhabi, United Arab Emirates

    Mauro Fernandes Pereira

  2. Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic

    Apostolos Apostolakis

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Szerling, A. et al. (2021). Crucial Aspects of the Device Processing of Quantum Cascade Lasers. In: Pereira, M.F., Apostolakis, A. (eds) Terahertz (THz), Mid Infrared (MIR) and Near Infrared (NIR) Technologies for Protection of Critical Infrastructures Against Explosives and CBRN. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-2082-1_4

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