Abstract
A simple way of forming porous templates of silicon dioxide using ion-track technology was demonstrated. Investigations of the dependence of the characteristics, both of a single pore and of the entire template on the etching time and concentration of etchant were carried out. The possibility of high-precision control of the parameters of porous templates through the post-processing of SEM images in the ImageJ software was demonstrated. An express method for estimating template parameters using ellipsometry was proposed.
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Acknowledgements
The authors acknowledge the support of the work in frames of H2020 – MSCA – RISE2017 – 778308 – SPINMULTIFILM Project, the Scientific-technical program ‘Technology-SG’ [project number 3.1.5.1], and Belarusian Foundation for Basic Research [project number Ф17М-005].
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Kaniukov, E., Bundyukova, V., Kutuzau, M., Yakimchuk, D. (2019). Peculiarities of Formation and Characterization of SiO2/Si Ion-Track Template. In: Maffucci, A., Maksimenko, S. (eds) Fundamental and Applied Nano-Electromagnetics II. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-1687-9_3
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