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Ferroelectric-Gate Field Effect Transistor Memories pp 111–138Cite as

Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs

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Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

Controlled-polarization-type ferroelectric-gate thin film transistors (FeTFTs), which utilize the interaction between the polarizations of a polar semiconductor and a ferroelectric layer, have been proposed. When the polarizations align head to head, electrons that correspond to the sum of the polarizations are induced at the interface between the polar semiconductor and the ferroelectric layer. When the semiconductor is depleted, however, the polarization in the polar semiconductor aligns in the same direction as the polarization in the ferroelectric layer, whereas the polarization of the ferroelectric layer remains stable even under a depolarization field. This chapter describes the non-volatile operation of the controlled-polarization-type FeTFTs resulting from the ferroelectric polarization reversal.

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Authors and Affiliations

  1. Graduate School of Engineering, Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka, 599-8531, Japan

    Norifumi Fujimura & Takeshi Yoshimura

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  1. Norifumi Fujimura
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  2. Takeshi Yoshimura
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Correspondence to Norifumi Fujimura .

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Editors and Affiliations

  1. Electrical and Computer Engineering, University of Seoul Electrical and Computer Engineering, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Cen, Tokyo Institute of Technology Frontier Collaborative Research Cen, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Scie, Osaka University Graduate School of Engineering Scie, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science&Tech (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information & Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Fujimura, N., Yoshimura, T. (2016). Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Dordrecht. https://doi.org/10.1007/978-94-024-0841-6_6

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  • DOI: https://doi.org/10.1007/978-94-024-0841-6_6

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