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Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate

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Abstract

Thin films of various types are key components of modern microelectronics. By use of the dynamic nanoindentation method, Cu/Si structures with different thicknesses of the Cu film (t = 85, 470 and 1,000 nm) were investigated. It is shown that the film thickness and the wide range of maximum loads applied are some of the main factors influencing the deformation peculiarities and mechanical properties (Young’s modulus E and hardness H) of the film/substrate structures.

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References

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Acknowledgments

The author thanks Dr. Lidia Ghimpu for the help with preparation of the Cu/Si structures by use of the magnetron sputtering method.

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Authors and Affiliations

  1. Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova

    Constantin Pyrtsac

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  1. Constantin Pyrtsac
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Correspondence to Constantin Pyrtsac .

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Editors and Affiliations

  1. Department of Physics, University of Chemical Technology and Metallurgy, Sofia, Bulgaria

    Plamen Petkov

  2. Department of Physics, Technical University of Moldova, Chisinau, Moldova

    Dumitru Tsiulyanu

  3. Dept. of Mathematics and Natural Sciences, University of Kassel, Kassel, Germany

    Wilhelm Kulisch

  4. Inst. of Nanostructure Technologies and Analytics, University of Kassel, Kassel, Germany

    Cyril Popov

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Pyrtsac, C. (2015). Nanoindentation Measurements of Cu Films with Different Thicknesses Deposited on a Single Crystalline Si Substrate. In: Petkov, P., Tsiulyanu, D., Kulisch, W., Popov, C. (eds) Nanoscience Advances in CBRN Agents Detection, Information and Energy Security. NATO Science for Peace and Security Series A: Chemistry and Biology. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9697-2_8

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