Charge Plasma Based Bipolar Junction Transistor on Silicon on Insulator
Charge plasma based devices are gaining interest due to various reasons, since these devices doesn’t require conventional ways of creating different doping regions, therefore these devices are free from various doping related issues related, as random doping fluctuations, doping activations and the requirement of high temperature annealing are absent in these devices. In this work we put forward a novel lateral pnp bipolar transistor on silicon on insulator. Metals of different work function are used to induce n and p type charge plasma on undoped silicon to have emitter, base and collector regions. The 2D simulation study has revealed that a very high current gain is achieved in the proposed device in comparison to conventional pnp transistor. The charge plasma concept is very much appropriate in surmounting the doping related issues such as diffusion or ion implantation, random doping fluctuations and high thermal budget in current nano devices.
KeywordsCharge plasma Current gain Doping Lateral BJT SOI Work function
This work was supported by NSTIP strategic technologies programs number (11-NAN-2118-02) in the Kingdom Saudi Arabia.
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