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Optical Annealing of Black Silicon

  • Benjamin Franta
  • D. Pastor
  • M. Aziz
  • E. Mazur
Conference paper
Part of the NATO Science for Peace and Security Series B: Physics and Biophysics book series (NAPSB)

Abstract

Silicon hyperdoped with chalcogens using femtosecond (fs) laser irradiation (“black silicon”) shows strong broad-band absorption due to intermediate band formation and surface texturing; thus, this material has promise for advanced optoelectronic devices such as silicon-based infrared photodetectors and intermediate band solar cells. To reduce structural defects and form a rectifying junction after fs laser irradiation, however, annealing is necessary, which deactivates the optical effect of the dopant. Here, we investigated the use of laser-based optical annealing using nanosecond (ns) excimer pulses and found that it removes amorphous material resulting from the black silicon fabrication process while maintaining high above-bandgap and sub-bandgap absorption. We also studied the effect of ns optical annealing on the surface morphology of black silicon.

Keywords

Solar Cell Surface Morphology Laser Irradiation Structural Defect Fabrication Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer Science+Business Media Dordrecht 2015

Authors and Affiliations

  1. 1.School of Engineering and Applied SciencesHarvard UniversityMAUSA

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