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Thermal Effects on TSV Signal Integrity

  • Manho Lee
  • Jun So Pak
  • Joungho Kim
Chapter

Abstract

In this chapter, we propose temperature dependent TSV isolation model and the result is applied to the channel model. The thermal effect on through-silicon via (TSV) noise coupling and S21 of TSV channel were measured in both frequency and time domain from corresponding TSV based test vehicle. These measurement results are analyzed using the temperature-dependent TSV lumped model to TSV channel and shows good correlation with measurement. Under the hundreds-of-MHz frequency range, increasing temperature decreases the S21 of TSV channel, but over that frequency range, increasing temperature increases the S21. These phenomena are explained from the model which thermal dependence of the materials is applied.

Keywords

Through-silicon via Temperature-dependent TSV lumped model Thermal effects Noise coupling TSV signal integrity 

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Copyright information

© Springer Science+Business Media Dordrecht 2014

Authors and Affiliations

  1. 1.Department of Electrical EngineeringKAISTDaejeonRepublic of Korea
  2. 2.System LSISamsung Electronics Co., Ltd.HwaseongRepublic of Korea

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