High-Speed TSV-Based Channel Modeling and Design

  • Heegon Kim
  • Jun So Pak
  • Joungho Kim


In this chapter, the modeling and analysis of a high-speed TSV-based channel are investigated. At the beginning of this chapter, the equivalent circuit models of TSV and silicon interposer interconnect are introduced. Based on the introduced equivalent circuit models, the electrical properties of the coaxial TSV and the silicon interposer interconnect are analyzed. In the case of the coaxial TSV analysis, the unique characteristic of the coaxial TSV comparing to that of the normal TSV is investigated. In the case of the silicon interposer interconnect analysis, the impact of the interconnect structure to the performance is intensively analyzed. The dominant impact of the silicon interposer interconnect to the performance of the total high-speed TSV channel is also analyzed. In addition, the measured S21 and eye-diagram of the high-speed TSV channel and the comparison of electrical properties between the high-speed TSV channel and the MCM channel are, respectively, demonstrated as examples. At the end of this chapter, a fast and precise worst-case eye-diagram estimation algorithm for high-speed TSV channel is introduced and experimentally verified.


High-speed TSV-based channel Coaxial TSV Silicon interposer Channel loss (S21Eye-diagram Reflection Worst-case eye-diagram estimation 


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Copyright information

© Springer Science+Business Media Dordrecht 2014

Authors and Affiliations

  1. 1.Department of Electrical EngineeringKAISTDaejeonRepublic of Korea
  2. 2.System LSISamsung Electronics Co., Ltd.HwaseongRepublic of Korea

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