High-Speed TSV-Based Channel Modeling and Design

Chapter

Abstract

In this chapter, the modeling and analysis of a high-speed TSV-based channel are investigated. At the beginning of this chapter, the equivalent circuit models of TSV and silicon interposer interconnect are introduced. Based on the introduced equivalent circuit models, the electrical properties of the coaxial TSV and the silicon interposer interconnect are analyzed. In the case of the coaxial TSV analysis, the unique characteristic of the coaxial TSV comparing to that of the normal TSV is investigated. In the case of the silicon interposer interconnect analysis, the impact of the interconnect structure to the performance is intensively analyzed. The dominant impact of the silicon interposer interconnect to the performance of the total high-speed TSV channel is also analyzed. In addition, the measured S21 and eye-diagram of the high-speed TSV channel and the comparison of electrical properties between the high-speed TSV channel and the MCM channel are, respectively, demonstrated as examples. At the end of this chapter, a fast and precise worst-case eye-diagram estimation algorithm for high-speed TSV channel is introduced and experimentally verified.

Keywords

High-speed TSV-based channel Coaxial TSV Silicon interposer Channel loss (S21Eye-diagram Reflection Worst-case eye-diagram estimation 

References

  1. 1.
    Dumas S (2011) Mobile memory forum: LPDDR3 and WideIO. In: JEDEC mobile forum, June 2011Google Scholar
  2. 2.
    Kim H, Cho J, Kim M, Kim K, Lee J, Lee H, Park K, Choi K, Bae H, Kim J, Kim J (2012) Measurement and analysis of a high-speed TSV channel. IEEE Trans Compon Packag Manuf Tech 2(10): 1672–1685Google Scholar
  3. 3.
    Kim H, Cho J, Kim J, Kim M, Lee J, Lee H, Park K, Kim J, Pak J (2011) Channel design for wide system bandwidth in a TSV based 3D IC. In: Proceedings of IEEE signal propagation on interconnects 2011, pp 57–60, May 2011Google Scholar
  4. 4.
    Yue CP, Wong SS (2000) Physical modeling of spiral inductors on silicon. IEEE Trans Electron Devices 47:560–568CrossRefGoogle Scholar
  5. 5.
    Chen E, Chou SY (1997) Characteristics of coplanar transmission lines on multilayer substrates: modeling and experiments. IEEE Trans Microw Theory Tech 45:939–945CrossRefGoogle Scholar
  6. 6.
    Grabinski H, Konrad B, Nordholtz P (1998) Simple formulas to calculate the line parameters of interconnects on conducting substrates. In: Proceedings of Dig. IEEE 7th topical meeting electrical performance of electronic packaging, West Point, New York, pp 223–226, 26–28 Oct 1998Google Scholar
  7. 7.
    Yook J, Kim J, Park S, Ryu J, Park J (2012) High density and low-cost silicon interposer using thin-film and organic lamination processes. In: Proceedings of IEEE electronic components and technology conference 2012, pp 274–278, May 2012Google Scholar
  8. 8.
    Kim J, Pak J, Cho J, Song E, Cho J, Song T, Kim H, Lee J, Park K, Yang S, Suh M, Byun K, Kim J (2011) High-frequency scalable electrical model and analysis of a through silicon via (TSV). IEEE Trans Adv Packag 1(2):181–195Google Scholar
  9. 9.
    Xu Z, Lu J-Q (2012) Three-dimensional coaxial through-silicon-via (TSV) design. IEEE Electron Device Lett 33:1441–1443CrossRefMathSciNetGoogle Scholar
  10. 10.
    Kim J, Song E, Cho J, Pak J, Lee J, Lee H, Park K, Kim J (2009) Through silicon via (TSV) equalizer. In: Proceedings of IEEE electrical performance of electronic packaging and systems 2009, pp 13–16, Oct 2009Google Scholar
  11. 11.
    Hall SH et al. (2000) High-speed digital system design, a handbook of interconnect theory and design practices. Wiley, New York, pp 330–331Google Scholar
  12. 12.
    Hall SH et al (2000) High-speed digital system design, a handbook of interconnect theory and design practices. Wiley, New York, pp 78–79Google Scholar
  13. 13.
    Sridharan V, Min S, Sundaram V, Sukumaran V, Hwang S, Chan H, Liu F, Nopper C, Tummala R (2010) Design and fabrication of bandpass filters in glass interposer with through-package-vias (TPV). In: Proceedings of IEEE electronic components and technology conference 2010, pp 530–535, Jun 2010Google Scholar
  14. 14.
    Kim N, Wu ZD, Carrel J, Kim J, Wu P (2012) Full system channel co-optimization for 28 Gb/s SerDes FPGA applications with stacked silicon interconnect technology. In: Proceedings of DesignCon 2012Google Scholar
  15. 15.
    Kim H, Cho J, Jung DH, Kim JJ, Choi K-S, Bae H-C, Kim J, Pak JS (2012) Measurement-based signal quality test of high-speed TSV channel. In: Proceedings of international microelectronics and packaging society 2012, Sep 2012Google Scholar
  16. 16.
    Kim J, Cho J, Pak J, Song T, Lee H, Lee J, Park K, Kim J (2010) I/O power estimation and analysis of high-speed channels in through-silicon via-based 3D IC. In: IEEE EPEPS 2010, pp 41–44, Oct 2010Google Scholar
  17. 17.
    Kim D, Mukhopadhyay S, Lim S (2011) Fast and accurate analytical modeling of through-silicon-via capacitive coupling. IEEE Trans Compon Packag Manuf Tech 1(2):168–180CrossRefGoogle Scholar
  18. 18.
    Bandyopadhyay T, Chatterjee R, Chung D, Swaminathan M, Tummala R (2009) Electrical modeling of through silicon and package vias. In: 3D System Integration 2009, IEEE, Sep 2009Google Scholar
  19. 19.
    Buckwalter J et al (2004) Predicting data-dependent jitter. In: CAS-II, 2004Google Scholar
  20. 20.
    Casper BK, Haycock M, Mooney R (2002) An accurate and efficient analysis method for multi-Gbps chip-to-chip signaling scheme. In: Proceedings of IEEE symposium of VLSI circuits, pp 54–57, June 2002Google Scholar
  21. 21.
    Cho J, Song E, Shim J, Kim J, Kim J (2009) A precise eye-diagram estimation method for non-ideal high-speed channels. In: Proceedings of IEEE EPEP 2009, pp 159–162, Oct 2009Google Scholar
  22. 22.
    Cho J, Song E, Shim J, Shim Y, Kim J (2009) A fast and precise analytical eye-diagram estimation method for a channel of a pair of differential microstrip lines on PCB with arbitrary terminations. In: Proceedings of IEEE EDAPS 2009, pp 1–4, Dec 2009Google Scholar
  23. 23.
    Guo W, Lin J, Lin C, Huang T, Wu R (2009) Fast methodology for determining eye diagram characteristics of lossy transmission lines. IEEE Trans Adv Packag 32(1):175–183CrossRefGoogle Scholar
  24. 24.
    Pozar D (2005) Microwave engineering, 3rd edn. Wiley, New YorkGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2014

Authors and Affiliations

  1. 1.Department of Electrical EngineeringKAISTDaejeonRepublic of Korea
  2. 2.System LSISamsung Electronics Co., Ltd.HwaseongRepublic of Korea

Personalised recommendations