TSV (Through Silicon Via) is now a key-technology in the mobile era because it can enable high-performance, hybrid, light-weight, small mobile devices with longer battery lifetimes and low manufacturing costs by reusing IP (intellectual property) and selecting optimized and high-yield, functional chips. This chapter discusses why TSV-based 3D ICs (3 dimensional integrated circuits) are a possible solution for future mobile devices from the perspective of exploiting advantages in their electrical designs. This chapter also provides a brief introduction to the electrical analysis of TSVs based on MIS (Metal-Insulator-Semiconductor) analyses.


Differential signal TSV Equivalent circuit model Single-ended signal TSV Scalable model TSV channel 3D IC 


  1. 1.
    3D IC and TSV Report (2007 Edition), Yole development, 2007Google Scholar
  2. 2.
    Advanced IC Packaging (2007 Edition), Electronic Trend Publications, Inc., San Jose, CAGoogle Scholar
  3. 3.
    Kang U, Chung H, Heo S, Park D, Lee H, Kim JH, Ahn S, Cha S, Ahn J, Kwon D, Lee J, Joo H, Kim W, Jang DH, Kim NS, Choi J, Chung T, Yoo J, Choi JS, Kim C, Jun Y (2010) 8 Gb 3-D DDR3 DRAM using through-silicon-via technology. IEEE J Solid-State Circuits 45(1):111–119CrossRefGoogle Scholar
  4. 4.
    Shibata T, Sano E (1990) Characterization of MIS structure coplanar transmission lines for investigation of signal propagation in integrated circuits. IEEE Trans Microw Theory Tech Techniques 38(7):881–890CrossRefGoogle Scholar
  5. 5.
    Ott HW (1988) Noise reduction techniques in electronic systems, 2nd edn. Wiley, New YorkGoogle Scholar
  6. 6.
    Pak JS, Cho J, Kim J, Lee J, Lee H, Park K, Kim J (2010) Slow wave and dielectric quasi-TEM modes of metal-insulator-semiconductor structure through silicon via in signal propagation and power delivery in 3d chip package In: Proceedings of the 60th electronic components and technology Conference 2010 (ECTC 2010), June, 2010Google Scholar
  7. 7.
    Pak JS, Kim J, Cho J, Kim K, Song T, Ahn S, Lee J, Lee H, Park K, Kim J (2011) PDN impedance modeling and analysis of 3D TSV IC by using proposed P/G TSV array model based on separated P/G TSV and chip-PDN Models. IEEE Trans Compon Packag Manuf Technol 1(2):208–219CrossRefGoogle Scholar
  8. 8.
    Cheng DK (1993) Fundamentals of engineering electromagnetics, Addison-Wesley, Inc., New YorkGoogle Scholar
  9. 9.
    Grover FW (1946) Inductance calculations, D. Van Nostrand Company, Inc., New YorkGoogle Scholar
  10. 10.
    Pozar DM (1990) Microwave engineering, Addison-Wesley, Inc., MA, USAGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2014

Authors and Affiliations

  1. 1.Department of Electrical EngineeringKAISTDaejeonRepublic of Korea
  2. 2.System LSISamsung Electronics Co., Ltd.HwaseongRepublic of Korea

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