Introduction

Chapter

Abstract

TSV (Through Silicon Via) is now a key-technology in the mobile era because it can enable high-performance, hybrid, light-weight, small mobile devices with longer battery lifetimes and low manufacturing costs by reusing IP (intellectual property) and selecting optimized and high-yield, functional chips. This chapter discusses why TSV-based 3D ICs (3 dimensional integrated circuits) are a possible solution for future mobile devices from the perspective of exploiting advantages in their electrical designs. This chapter also provides a brief introduction to the electrical analysis of TSVs based on MIS (Metal-Insulator-Semiconductor) analyses.

Keywords

Differential signal TSV Equivalent circuit model Single-ended signal TSV Scalable model TSV channel 3D IC 

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Copyright information

© Springer Science+Business Media Dordrecht 2014

Authors and Affiliations

  1. 1.Department of Electrical EngineeringKAISTDaejeonRepublic of Korea
  2. 2.System LSISamsung Electronics Co., Ltd.HwaseongRepublic of Korea

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