Skip to main content
SpringerLink
Log in

Vibrational States of Al Adsorbed on Ge Clusters

  • Chapter
Physics and Chemistry of Finite Systems: From Clusters to Crystals

Part of the book series: NATO ASI Series ((ASIC,volume 374))

  • 25 Accesses

Abstract

Interference enhanced Raman spectra of Al adsorbed on Ge clusters reveal an Al induced vibrational band. The resulting effective force constant implies a significantly weaker interaction than that of the similar reduced mass Si-Ge system. Consistent XPS core line shifts of Al and Ge (0.6eV) suggest the formation of a weak covalent bond between the metal adsorbate and semiconductor clusters.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. J. Fortner and J.S. Lannin (1991) ‘Chemisorption effects on the dynamics of Ge clusters and ultrathin films’, Surface Science, Volume 254, 251–60.

    Google Scholar 

  2. A. Zangwill (1988) Physics at Surfaces, Cambridge University Press, p. 315.

    Google Scholar 

  3. B.Y. Yang, T. Gu, R.Q. Yu, J.S. Lannin and R.W. Collins (1990) ‘In situ ellipsometry of Ge clusters and ultrathin films’, MRS Symposium Proceedings Volume 206, p. 417.

    Article  Google Scholar 

  4. J. Former, R.Q. Yu and J S Lannin (1990) ‘Near-surface Raman scattering in germanium clusters and ultrathin amorphous films’, Physical Review B 42, 7610–7613.

    Article  Google Scholar 

  5. W. Bacsa and J.S. Lanvin, to be published.

    Google Scholar 

  6. W.J. Brya (1973) ‘Raman Scattering in Si-Ge alloys’, Solid State Communication Volume 12, 947.

    Article  Google Scholar 

  7. J.S. Lannin (1977) ’ Vibrational and Raman scattering properties of crystalline Si-Ge alloys’, Physical Review B 16, 1510.

    Article  CAS  Google Scholar 

  8. J.S. Lannin (1974) ‘Raman scattering in amorphous Ge-Si alloys’, Proceedings of the 5th International Conference of Amorphous and Liquid Semiconductors, ed J. Stuke and W. Brenig, Taylor and Francis, p. 1245.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, Penn State University, University Park, PA, 16802, USA

    W. S. Bacsa & J. S. Lannin

Authors
  1. W. S. Bacsa
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. J. S. Lannin
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Department of Physics, Virginia Commonwealth University, Richmond, VA, USA

    P. Jena , S. N. Khanna  & B. K. Rao ,  & 

Rights and permissions

Reprints and permissions

Copyright information

© 1992 Springer Science+Business Media Dordrecht

About this chapter

Cite this chapter

Bacsa, W.S., Lannin, J.S. (1992). Vibrational States of Al Adsorbed on Ge Clusters. In: Jena, P., Khanna, S.N., Rao, B.K. (eds) Physics and Chemistry of Finite Systems: From Clusters to Crystals. NATO ASI Series, vol 374. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-2645-0_41

Download citation

  • DOI: https://doi.org/10.1007/978-94-017-2645-0_41

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-017-2647-4

  • Online ISBN: 978-94-017-2645-0

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation